Abstract
Thickness filed excitation and lateral filed excitation are the two kinds of excitation mode in piezoelectric resonator. In this chapter, shear mode FBAR excited by lateral filed is demonstrated in theory and experiment. Theoretical analysis of the Christoffel equation shows that a shear mode wave along thickness direct can be excited in c-axis-oriented ZnO or AlN with an in-plane excitation field oriented in any direction on the wafer. The electric characteristics of LFE resonators are deduced according to the potential solved from the plane wave formalism. A real LFE FBAR with solid mounted structure is fabricated and the performance is presented. The average Q-factor of the devices is approximately 520 in air, 408 in water and 313 in glycerol, respectively.
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© 2013 Shanghai Jiao Tong University Press, Shanghai and Springer-Verlag Berlin Heidelberg
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Zhang, Y., Chen, D. (2013). The FBAR Excited by Lateral Filed. In: Multilayer Integrated Film Bulk Acoustic Resonators. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31776-7_8
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DOI: https://doi.org/10.1007/978-3-642-31776-7_8
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Publisher Name: Springer, Berlin, Heidelberg
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Online ISBN: 978-3-642-31776-7
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