Abstract
This paper intends to study the nonlinearity of LTE RF power amplifier and compensate for nonlinearity and memory effect of the amplifier, and compare the digital pre-distortion lookup table-based Digital pre-distortion and memory polynomial pre-compensation effect of the device. It can draw a conclusion that Digital Pre-Distortion can improve ACLR well, the memory effect of the amplifier in the single-carrier FDD-LTE signals can also be compensated at a certain degree.
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Chen, J. (2013). Study of Linearization Technology of LTE RF Power Amplifier Based on Pre-distortion. In: Jin, D., Lin, S. (eds) Advances in Mechanical and Electronic Engineering. Lecture Notes in Electrical Engineering, vol 178. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31528-2_25
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DOI: https://doi.org/10.1007/978-3-642-31528-2_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-31527-5
Online ISBN: 978-3-642-31528-2
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