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The EEM in Nanowires of Non-Parabolic Semiconductors

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Book cover Effective Electron Mass in Low-Dimensional Semiconductors

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 167))

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Abstract

It is well known that in nanowires (NWs), the restriction of the motion of the carriers along two directions may be viewed as carrier confinement by two infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.

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Authors and Affiliations

  1. Department of Electronics Systems Engineering, Nano Scale Device Research Laboratory, Indian Institute of Science, Bangalore, India

    Sitangshu Bhattacharya

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Agartala, Tripura West, India

    Kamakhya Prasad Ghatak

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  1. Sitangshu Bhattacharya
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  2. Kamakhya Prasad Ghatak
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Correspondence to Kamakhya Prasad Ghatak .

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Bhattacharya, S., Ghatak, K.P. (2012). The EEM in Nanowires of Non-Parabolic Semiconductors. In: Effective Electron Mass in Low-Dimensional Semiconductors. Springer Series in Materials Science, vol 167. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31248-9_5

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  • DOI: https://doi.org/10.1007/978-3-642-31248-9_5

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