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Physics of Direct Current Plasma-Enhanced Chemical Vapor Deposition

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Aligned Carbon Nanotubes

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Among various chemical vapor deposition methods, direct-current plasma-enhanced chemical vapor deposition is one of the most important methods to align carbon nanotubes. Highly ordered carbon nanotube arrays can be in situ grown by the method, widely being used in various chemical and biosensors. In this chapter, we introduce the equipment, physics, and experimental parameters of direct-current plasma-enhanced chemical vapor deposition to in situ grow carbon nanotube arrays.

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Author information

Authors and Affiliations

  1. Department of Physics, Boston College, Higgins Hall 230G, 140 Commonwealth Ave., Chestnut Hill, MA, 02467, USA

    Zhifeng Ren

  2. Department of Physics, Boston College, Higgins Hall 160, 140 Commonwealth Ave., Chestnut Hill, MA, 02467, USA

    Yucheng Lan

  3. Institute for Advanced Materials, Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, People’s Republic of China

    Yang Wang

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  1. Zhifeng Ren
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  2. Yucheng Lan
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  3. Yang Wang
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Correspondence to Zhifeng Ren .

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© 2012 Springer-Verlag Berlin Heidelberg

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Ren, Z., Lan, Y., Wang, Y. (2012). Physics of Direct Current Plasma-Enhanced Chemical Vapor Deposition. In: Aligned Carbon Nanotubes. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-30490-3_5

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