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Photomodulated Optical Reflectance

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Abstract

At first sight, it may seem surprising that carrier profiling, i.e. electrical characterization, can be performed with an optical measurement technique. We will, however, show in this work that these two research fields are linked to each other. This chapter therefore briefly introduces both research domains. It is mostly a compilation of results and insights that have been gathered by colleagues and other researchers who I would like to deeply acknowledge, since their direct and indirect input has been essential to this work.

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Notes

  1. 1.

    Calculated active doping concentrations much higher than the solubility limit can then be reached

  2. 2.

    The name of the technique, “RsL”, actually stands for Rs and Leakage measurement since it has been shown that the technique is able to measure leakage current simultaneously with sheet resistance. We will, however, not use or discuss that capability.

  3. 3.

    The ellipsometric parameters are the amplitude \(\tan \psi _e\) and phase \(\Delta _e\) of the ratio of the parallel component \(E_{rp}/E_{ip}\) to the perpendicular component \(E_{rs}/E_{is}\) of the reflection coefficient. The parallel and perpendicular directions refer here to the plane of incidence

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  1. IMEC, Leuven, Belgium

    Dr. Janusz Bogdanowicz

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Bogdanowicz, J. (2012). Introduction. In: Photomodulated Optical Reflectance. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-30108-7_1

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