Abstract
Multi-threshold CMOS is an increasingly popular circuit approach that enables high performance and low power operation. In this paper Reverse Body Bias (RBB) with high-Vth is used to reduce the leakage power in nanometer technology for the proposed array multiplier with CSA design. The results are carried out by H-Spice for 90nm and 65nm BSIM model files. MTCMOS circuits have shown good results than the conventional circuits.
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Nirlakalla, R., Boothuru, B.R., Thota, S.R., Rajasekhar Babu, M., Talari, J.P., Venkata Krishna, P. (2012). Designing of Power Optimized Bypassing Array Multiplier in Nanometer Technology. In: Krishna, P.V., Babu, M.R., Ariwa, E. (eds) Global Trends in Information Systems and Software Applications. ObCom 2011. Communications in Computer and Information Science, vol 270. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-29216-3_30
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DOI: https://doi.org/10.1007/978-3-642-29216-3_30
Publisher Name: Springer, Berlin, Heidelberg
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