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Memory Devices

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Chalcogenides

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 164))

Abstract

 Existing practical applications (and future trends) of phase-change materials for memory devices are described.

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Notes

  1. 1.

    Zhores I. Alferov and Herbert Kroemer were awarded the Nobel Prize in physics in 2000 “for developing semiconductor heterostructures used in high-speed- and optoelectronics” that form the basis of semiconductor lasers.

  2. 2.

    Recently there has been growing evidence that the amorphisation process can also be athermal under certain conditions [39–43].

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Authors and Affiliations

  1. Nanoelectronics Research Center, National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki, 305-8562, Japan

    Alexander V. Kolobov & Junji Tominaga

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  1. Alexander V. Kolobov
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  2. Junji Tominaga
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Correspondence to Alexander V. Kolobov .

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Kolobov, A.V., Tominaga, J. (2012). Memory Devices. In: Chalcogenides. Springer Series in Materials Science, vol 164. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28705-3_12

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  • DOI: https://doi.org/10.1007/978-3-642-28705-3_12

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