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Spatial and Spatiotemporal Patterns in Anodized Semiconductors

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Self-Organization in Electrochemical Systems II

Part of the book series: Monographs in Electrochemistry ((MOEC))

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Abstract

Following outline description of temporal current oscillations during anodic dissolution of selected semiconductors, given in Section 6.3 of volume I, the present chapter emphasizes the role of spatiotemporal dynamic instabilities in these phenomena. Accordingly, the oscillatory dissolution of silicon in fluoride media is analyzed in terms of present models of this process, based on the inhomogeneous distribution of silicon oxide layer and the dynamics of its formation/dissolution on the Si surface, including recent suggestions on the possible role of the ohmic potential drops. Theoretical calculations of current and voltage oscillations are compared with experimental results. Also, recent achievements in experimental visualization of spatiotemporal self-organization in Si anodization in fluoride media are described. Furthermore, examples of self-organization in III–V semiconductors (GaAs, GaP, InP) manifesting itself in the various kinds of emerging porous structures are described. The anodization of titanium to patterned, semiconducting TiO2 layer and conditions for formation of self-organized nanotubular TiO2 architectures are given. Furthermore, n-TiO2 is shown to form ordered arrays of nanogrooves during its electrochemical photoetching. An appropriate model, explaining the emergence of such patterns in terms of nonlinear dynamics, is outlined. As a summary, the overview of current state of spatiotemporal self-organization in etched semiconductors is presented.

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  1. Faculty of Chemistry, University of Warsaw, Warsaw, Poland

    Marek Orlik

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Orlik, M. (2012). Spatial and Spatiotemporal Patterns in Anodized Semiconductors. In: Self-Organization in Electrochemical Systems II. Monographs in Electrochemistry. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-27627-9_4

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