Abstract
This chapter aims to give a basic understanding of semiconductor lasers and semiconductor optical amplifiers (SOAs). Starting from the underlying physics of radiative emission, together with the elements of optical waveguide theory, simple approximations are found for optical gain, lasing threshold and cavity resonances. Rate equations are used to elucidate time-dependent laser behaviour and, in combination with a travelling-wave equation for spatial photon distribution, to describe the effects of saturation and crosstalk in SOAs.
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References
J. Faist, F. Capasso, D.L. Sivco, C. Sartori, A.L. Hutchinson, A.Y. Cho, Quantum cascade laser. Science 264, 553–556 (1994)
J. Liu, X. Sun, R. Camacho-Aguilera, L.C. Kimerling, J. Michel, Ge-on-Si laser operating at room temperature. Opt. Lett. 35, 679–681 (2010)
M.G.A. Bernard, G. Duraffourg, Laser conditions in semiconductors. Phys. Status Solidi 1, 699–703 (1961)
P.W.A. McIlroy, A. Kurobe, Y. Uematsu, Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers. IEEE J Quantum Electron. 21, 1958–1963 (1985)
L.A. Coldren, S.W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)
S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995)
W.W. Chow, S.W. Koch, Semiconductor-Laser Fundamentals: Physics of the Gain Materials (Springer, Berlin, 1999)
Z.I. Alferov, V.M. Andreev, D.Z. Garbuzov, Y.V. Zhilyaev, E.P. Morozov, E.L. Portnoi, V.G. Trofim, Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of continuous emission at the room temperature. Fiz. Tekh. Poluprovodn. 4, 1826–1829 (1970) (Sov. Phys. Semicond. 4, 1573–1575 (1971))
I. Hayashi, M.B. Panish, P.W. Foy, S. Sumski, Junction lasers which operate continuously at room temperature. Appl. Phys. Lett. 17, 109–111 (1970)
M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance. Jpn. J. Appl. Phys. 35, 1273–1275 (1996)
A.R. Adams, Band structure engineering for low-threshold high-efficiency semiconductor lasers. Electron. Lett. 22, 249–250 (1986)
E. Yablonovitch, E.O. Kane, Reduction of lasing threshold current density by the lowering of valence band effective mass. J. Lightw. Technol. LT-4, 504–506 (1986)
D. Botez, Analytical approximation of radiation confinement factor for TE0 mode of a double heterojunction laser. IEEE J. Quantum Electron. 14, 230–232 (1978)
J.E. Ripper, J.C. Dyment, L.A. D’Asaro, T.L. Paoli, Stripe-geometry double heterostructure junction lasers: mode structure and cw operation above room temperature. Appl. Phys. Lett. 18, 155–157 (1971)
T. Tsukada, GaAs-Ga{1-x}Al{x}As buried-heterostructure injection lasers. J. Appl. Phys. 45, 4899–4906 (1974)
I.P. Kaminow, R.E. Nahory, M.A. Pollack, L.W. Stulz, J.C. DeWinter, Single-mode c.w. ridge-waveguide laser emitting at \(1.55\,\mu \)m. Electron. Lett. 15, 763–765 (1979)
J. Buus, M.-C. Amann, D.J. Blumenthal, Tunable Laser Diodes and Related Optical Sources, 2nd edn. (Wiley, Hoboken, 2005)
H. Kogelnik, C.V. Shank, Coupled-wave theory of distributed feedback lasers. J. Appl. Phys. 43, 2327–2335 (1972)
K. Konnerth, C. Lanza, Delay between current pulse and light emission of a gallium arsenide laser. Appl. Phys. Lett. 4, 120–121 (1964)
C.H. Henry, Theory of the linewidth of semiconductor lasers. IEEE J. Quantum Electron. 18, 259–264 (1978)
C. Harder, K. Vahala, A. Yariv, Measurement of the linewidth enhancement factor \(\alpha \) of semiconductor lasers. Appl. Phys. Lett. 42, 328–330 (1983)
A.E. Kelly, I.F. Lealman, L.J. Rivers, S.D. Perrin, M. Silver, Polarisation insensitive, 25 dB gain semiconductor laser amplifier without antireflection coatings. Electron. Lett. 32, 1835–1836 (1996)
J. Piprek, S. Bjorlin, J.E. Bowers, Design and analysis of vertical-cavity semiconductor optical amplifiers. IEEE J. Quantum Electron. 37, 127–134 (2001)
T. Ito, N. Yoshimoto, K. Magari, K. Kishi, Y. Kondo, Extremely low power consumption semiconductor optical amplifier gate for WDM applications. Electron. Lett. 33, 1791–1792 (1997)
H. Ma, S.H. Chen, X.J. Yi, G.X. Gu, \(1.55\,\upmu\text{ m}\) spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers. Semicond. Sci. Technol. 19, 846–850 (2004)
J.Y. Jin, D.C. Tian, J. Shi, T.N. Li, Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers. Semicond. Sci. Technol. 19, 120–126 (2004)
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Adams, M.J. (2012). Fundamental Theory of Semiconductor Lasers and SOAs. In: Balkan, N., Xavier, M. (eds) Semiconductor Modeling Techniques. Springer Series in Materials Science, vol 159. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-27512-8_7
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DOI: https://doi.org/10.1007/978-3-642-27512-8_7
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