Abstract
This chapter aims to provide an introduction to the main principles of band structure engineering of semiconductor devices. We show that it is possible to modify artificially the electronic structure of semiconductor materials. The combination of strain and quantum confinement can in particular lead to great improvements of the semiconductor laser characteristics. This explains that most of the commercial semiconductor lasers and semiconductor optical amplifiers for optical telecommunications (1.3 and 1.55 \(\upmu \mathrm{ m}\)) are based on strained quantum wells.
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Carrère, H., Marie, X. (2012). Band Structure Engineering of Semiconductor Devices for Optical Telecommunications. In: Balkan, N., Xavier, M. (eds) Semiconductor Modeling Techniques. Springer Series in Materials Science, vol 159. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-27512-8_6
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