Abstract
For the photovoltaic application, a technique of high temperature crystallization was proposed to change from amorphous to polycrystalline silicon. We investigated the structural and electrical properties of the poly-Si thin films on Molybdenum (Mo) substrate using a direct resistive heating process. The hydrogenated amorphous silicon films were crystallized in the temperature range of 750°C to 1050°C. As the crystallization temperature increases, the intensity of the peaks for (111) orientation has strongly observed. Improvement of the crystallinity over 75% has been noticed. Photo conductivity and dark conductivity decreased with the increase in substrate temperature.
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© 2011 Springer-Verlag Berlin Heidelberg
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Kang, Hi., Choi, Ws., Jung, Yh., Hwang, Hs., Kim, Dy. (2011). Structural and Electrical Properties of High Temperature Polycrystalline Silicon Films on Molybdenum Substrate. In: Kim, Th., Adeli, H., Stoica, A., Kang, BH. (eds) Control and Automation, and Energy System Engineering. CES3 CA 2011 2011. Communications in Computer and Information Science, vol 256. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-26010-0_11
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DOI: https://doi.org/10.1007/978-3-642-26010-0_11
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-26009-4
Online ISBN: 978-3-642-26010-0
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