Abstract
CuInS2 (CIS) thin films were prepared by sulfurization of the Cu-In metallic precursors in sulfur atmosphere. Cu-In metallic precursor layers were deposited onto soda lime glass substrates by pulsed-dc magnetron sputtering process, CuInS2 samples were grown by sulfurization of the Cu-In metallic precursors in the sulfurization experiment set up, the influences of annealing temperature and annealing time on the films properties were studied. Microstructure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and spectrophotometer. The results explicitly reveal that annealing conditions exerts significant influences on the properties of the CuInS2 films during the sulfurization process.
This Project was Supported by Xi’an Applied Materials Innovation Found (No.XA-AM- 09014).
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Ma, J., Gao, Y., Liu, Y. (2011). Characterization of CuInS2 Thin Films Prepared by Sulfurization of the Cu-In Precursors. In: Zheng, D. (eds) Advances in Electrical Engineering and Electrical Machines. Lecture Notes in Electrical Engineering, vol 134. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25905-0_44
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DOI: https://doi.org/10.1007/978-3-642-25905-0_44
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