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MRAM

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The Physics of Ferromagnetism

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 158))

Abstract

Magnetic memory possesses a great advantage of nonvolatility due to intrinsic magnetic property of memory cell used and has been studied for a long time. The developing order is Ferrite core memory, plane and wire memories using Permalloy thin film, bubble memory by Orthoferrite, and Magnetoresistive Random Access Memory or Magnetic Random Access Memory (MRAM) using Giant Magnetoresistance (GMR) or Tunnel Magnetoresistance (TMR). We will review on the MRAM focusing on the important reports contributed to the development of MRAM. Especially, we will explain in detail the issues of MRAM development using spin transfer torque switching.

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Authors and Affiliations

  1. Department of Physics, Jilin University, Changchun, People’s Republic of China

    Hanmin Jin

  2. Advanced Inst. Materials Research, Tohoku University, Sendai, Japan

    Terunobu Miyazaki

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  1. Hanmin Jin
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  2. Terunobu Miyazaki
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Correspondence to Hanmin Jin .

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© 2012 Springer-Verlag Berlin Heidelberg

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Jin, H., Miyazaki, T. (2012). MRAM. In: The Physics of Ferromagnetism. Springer Series in Materials Science, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25583-0_13

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  • DOI: https://doi.org/10.1007/978-3-642-25583-0_13

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-25582-3

  • Online ISBN: 978-3-642-25583-0

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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