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Tunnel Magnetoresistance Effect

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The Physics of Ferromagnetism

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 158))

Abstract

First, both roots of tunnel effect in physics and magnetoresistance are described and then the birth of the term “tunnel magnetoresistance (TMR)” combining tunnel and magnetoresistance is explained. Then, the phenomenological theory of TMR based on Julliere is shown and the comparison among TMR, GMR, and Planner Hall Effect (PHE) is made. The trigger of MgO barrier tunnel junction is described and typical data reported first are introduced.

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Authors and Affiliations

  1. Department of Physics, Jilin University, Changchun, People’s Republic of China

    Hanmin Jin

  2. Advanced Inst. Materials Research, Tohoku University, Sendai, Japan

    Terunobu Miyazaki

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  1. Hanmin Jin
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Jin, H., Miyazaki, T. (2012). Tunnel Magnetoresistance Effect. In: The Physics of Ferromagnetism. Springer Series in Materials Science, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25583-0_12

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  • DOI: https://doi.org/10.1007/978-3-642-25583-0_12

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