Abstract
As interest has increased in the interaction between low-temperature plasmas and materials, the role of modeling and simulation of processing plasmas has become important in understanding the effects of charged particles and radicals in plasma applications. Also, in order to understand the behavior and properties of chemically active plasma, atomic and molecular processes have become a rapidly growing area of scientific endeavor that holds great promise for practical applications for industrial fields. Thus, in this chapter, we briefly introduce the applications of low-temperature plasma, especially plasma processing in semiconductor manufacturing, and what kind of data needed in plasma processing, how to develop the reaction mechanisms, and how it applied to the simulation. 0D global modeling of ICP plasma-etching equipment and development of a two-dimensional fluid simulator for a SiH4discharge are given as an example. In addition, we introduce the line-intensity ratio method for plasma diagnostic, it can be a good example how atomic and molecular data can be used plasma diagnostics.
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Acknowledgements
The author acknowledges the collaboration of many colleagues in preparing this chapter. Especially thanks to Prof. Y. Itikawa, Prof. H. Tanaka, and Prof. H. Cho for their helpful discussions and the provision of meaningful information. Also author thanks to Dr. Young-Woo Kim, Dae-Chul Kim, Yong-Hyun. Kim, and Dr. Jong-Sik Kim for their unlimited efforts on A+M data research activities.
This work was supported by the Basic Plasma Research(National Fusion Research Institute) and grant funded by the Ministry of Education, Science and Technology. Also, partially supported by the Development of Korea National Standard Reference Dataand program funded by the Ministry of Knowledge Economy.
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Song, MY. et al. (2012). Atomic and Molecular Data for Industrial Application Plasmas. In: Shevelko, V., Tawara, H. (eds) Atomic Processes in Basic and Applied Physics. Springer Series on Atomic, Optical, and Plasma Physics, vol 68. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25569-4_14
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