Abstract
In order to achieve a low threshold in GaN-based laser diodes, sufficient optical gain has to be provided by the active region to compensate the optical losses at a low pump current. The optical gain is a function of charge carrier density in the quantum wells, which is proportional to the product of current and charge carrier lifetime. A reduction of threshold current can thus be achieved by optimizing the active region for a long carrier lifetime.
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Scheibenzuber, W.G. (2012). Dynamics of Charge Carriers and Photons. In: GaN-Based Laser Diodes. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-24538-1_6
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DOI: https://doi.org/10.1007/978-3-642-24538-1_6
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