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Minority Carrier Transport in ZnO and Related Materials

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Book cover GaN and ZnO-based Materials and Devices

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 156))

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Abstract

Transport properties of minority carriers in ZnO and related compounds are of critical importance for the functionality of bipolar devices. This review summarizes the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of nonequilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used for measurements of the minority carrier diffusion length and lifetime, are provided.

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Acknowledgements

This research is partially supported by the National Science Foundation (ECCS #0900971), US-Israel Binational Science Foundation (award #2008328) and NATO (SfP #981939).

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Authors and Affiliations

  1. Department of Physics, University of Central Florida, Orlando, FL, 32816, USA

    Elena Flitsyian & Leonid Chernyak

  2. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel

    Zinovy Dashevsky

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  1. Elena Flitsyian
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Correspondence to Leonid Chernyak .

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  1. , Materials Science and Engineering, University of Florida, 100 Rhines Hall, Gainesville, 32611, USA

    Stephen Pearton

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Flitsyian, E., Dashevsky, Z., Chernyak, L. (2012). Minority Carrier Transport in ZnO and Related Materials. In: Pearton, S. (eds) GaN and ZnO-based Materials and Devices. Springer Series in Materials Science, vol 156. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23521-4_11

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