Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the zincblende modification and effective mass parameters of GaP.
Contained Elements: Ga-P
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Keywords
substance: | gallium phosphide (GaP), zincblende modification |
property: | effective-mass parameters (electronic properties) |
References
Jancu, J.-M., Scholz, R., Andrada e Silva, E.A., La Rocca, G.C.: Phys. Rev. B 72 (2005) 193201.
Chantis, A.N., van Schilfgaarde, M., Kotani, T.: Phys. Rev. Lett. 96 (2006) 086405.
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da Silva, E.C.F. (2012). GaP: zincblende modification, effective mass parameters. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_96
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DOI: https://doi.org/10.1007/978-3-642-23415-6_96
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6