Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the energy gap of GaP, wurtzite modification.
Contained Elements: Ga-P
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Keywords
substance: | gallium phosphide (GaP), wurtzite modification |
property: | energy gap (electronic properties) |
energy gap
The theoretical value of the direct gap in the wurtzite phase between the Đ“9v valence-band maximum and the Đ“8c conduction-band minimum is 2.251 eV, as determined by empirical pseudopotential calculations including spin-orbit coupling [10D].
References
De, A., Pryor, E.: Phys. Rev. B 81 (2010) 155210.
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da Silva, E.C.F. (2012). GaP, wurtzite modification: energy gap. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_93
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DOI: https://doi.org/10.1007/978-3-642-23415-6_93
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6