Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the spin-orbit splitting of InBi.
Contained Elements: Bi-In
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Keywords
substance: | indium bismuth (InBi) |
property: | spin-orbit splitting (electronic properties) |
spin-orbit splitting
(in eV)
Physical Property | Numerical Values | Remarks | Ref. |
|---|---|---|---|
Δ 0(Г8v–Г7v) | 2.150 | FP-LAPW method within local density approximation |
References
Carrier, P., Wei, S,.H.: Phys. Rev. B 70 (2004) 035212.
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© 2012 Springer-Verlag Berlin Heidelberg
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da Silva, E.C.F. (2012). InBi: spin-orbit splitting. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_53
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DOI: https://doi.org/10.1007/978-3-642-23415-6_53
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6