Abstract
In this chapter, we will discuss the possible application ofInGaN:Mn layers for Intermediate Band Solar Cell devices. We will consider the reasons for choosing to study this promising system; why plasma-assisted molecular beam epitaxy is the method of choice to produce such structures; the specific problems associated with InGaN growth and the progress made so far in achieving this objective. We also discuss briefly other possible dopants for IBSCs based on InGaN.
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Foxon, C.T., Novikov, S.V., Campion, R.P. (2012). InGaN Technology for IBSC Applications. In: Cristóbal López, A., Martà Vega, A., Luque López, A. (eds) Next Generation of Photovoltaics. Springer Series in Optical Sciences, vol 165. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23369-2_12
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