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The Quantum Dot Intermediate Band Solar Cell

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Next Generation of Photovoltaics

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 165))

Abstract

This chapter concentrates on the development of the intermediate band solar cell (IBSC) using InAs quantum dots (QD) embedded within an (Al,Ga)As single p-n junction. The growth and optimisation of the QD structures using molecular beam epitaxy (MBE) are discussed, and issues related to the manufacture of solar cell die for concentrator photovoltaic system applications are addressed. Advanced characterisation techniques have been employed to compare the performance of QD-IBSCs against reference (un-modified) single junction (Al,Ga)As cells, and results from these studies are assessed. It is concluded that the main operating principles of the IBSC have been demonstrated, including the generation of photo-current by the absorption of two sub-bandgap photons, and voltage preservation when thermal and/or tunnelling-assisted escape from the intermediate band are suppressed. However, efficiencies in excess of those for un-modified (Al,Ga)As reference cells have not yet been achieved.

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Acknowledgements

This work has been supported by the European Commission through grant number 211640, IBPOWER and NANOGEFFES (ENE2009-14481-C02-01) funded by the Spanish National Programmes. The authors are indebted to numerous colleagues at the University of Glasgow and the Universidad Politécnica de Madrid for their contributions to the work described in this chapter.

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Authors and Affiliations

  1. School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK

    Colin R. Stanley

  2. School of Engineering, University of Glasgow, Glasgow, UK

    Corrie D. Farmer

  3. Instituto de Energía Solar, Universidad Politécnica de Madrid, Madrid, Spain

    Elisa Antolín, Antonio Martí & Antonio Luque

Authors
  1. Colin R. Stanley
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  2. Corrie D. Farmer
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  3. Elisa Antolín
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  4. Antonio Martí
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  5. Antonio Luque
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Corresponding author

Correspondence to Colin R. Stanley .

Editor information

Editors and Affiliations

  1. E.T.S.I. Telecommunicacion, Inst. Energia Solar, Universidad Politéchnica de Madrid, Avda. de la Complutense s/n, Madrid, 28041, Spain

    Ana Belén Cristóbal López

  2. E.T.S.I. Telecommunicacion, Inst. Energia Solar, Universidad Politéchnica de Madrid, Avda. de la Complutense s/n, Madrid, 28041, Spain

    Antonio Martí Vega

  3. E.T.S.I. Telecommunicacion, Inst. Energia Solar, Universidad Politéchnica de Madrid, Avda. de la Complutense s/n, Madrid, 28041, Spain

    Antonio Luque López

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Stanley, C.R., Farmer, C.D., Antolín, E., Martí, A., Luque, A. (2012). The Quantum Dot Intermediate Band Solar Cell. In: Cristóbal López, A., Martí Vega, A., Luque López, A. (eds) Next Generation of Photovoltaics. Springer Series in Optical Sciences, vol 165. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23369-2_10

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  • DOI: https://doi.org/10.1007/978-3-642-23369-2_10

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