Abstract
The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature has also been investigated for the case of Silicon DG-MOSFET and a comparison with DG-TFET is made. The parameters governing the analog performance and linearity has been studied and the impact of a gate stack (GS) architecture has also been investigated for the same.
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References
Nauta, B., Annema, A.-J.: Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies. In: Proceedings of 31st European Solid-State Circuits Conference, ESSCIRC, pp. 45–53 (2005)
Zhang, Q., Seabaugh, A.: Can the Interband Tunnel FET Outperform Si CMOS? In: Proceedings of Device Research Conference, pp. 73–74 (2008)
Kim, S.H., Kam, H., Hu, C., Liu, T.J.K.: Germanium-source tunnel field effect transistors with record high ION/IOFF. In: Symposium on VLSI Technology, pp. 178–179 (2009)
Choi, W.Y., Park, B.G., Lee, J.D., Liu, T.K.: Tunneling field effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28, 743–745 (2007)
Mookerjea, S., Datta, S.: Comparative study of Si, Ge and InAs based steep subthreshold slope tunnel transistors for 0.25V supply voltage logic applications. In: Proceedings of 63rd Device Research Conference, pp. 47–48 (2008)
Born, M., Bhuwalka, K.K., Schindler, M., Abilene, U., Schmidt, M., Sulima, T., Eisele, I.: Tunnel FET: A CMOS Device for high Temperature Applications. In: 25th International Conference on Microelectronics, pp. 124–127 (2006)
Guo, P.-F., Yang, L.-T., Yang, Y., Fan, L., Han, G.-Q., Samudra, G.S., Yeo, Y.-C.: Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current. IEEE Electron Device Letters 30, 981–983 (2009)
Wan, J., Royer, C.L., Zaslavsky, A., Cristoloveanu, S.: SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior. In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 341–344 (2010)
Nirschl, T., Wang, P.-F., Hansch, W., Schmitt-Landsiedel, D.: The tunneling field effect transistors (TFET): the temperature dependence, the simulation model, and its application. In: Proceedings of the 2004 International Symposium on Circuits and Systems, pp. 713–716 (2004)
Anghel, C., Chilagani, P., Amara, A., Vladimirescu, A.: Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric. Applied Physics Letters 96, 122104 (2010)
Boucart, K., Ionescu, A.M.: Double-gate tunnel FET with high- k gate dielectric. IEEE Trans. Electron Devices 54(7), 1725–1733 (2007)
ATLAS Device Simulation Software, Silvaco Int., Version 5.14.0.R
Woerlee, P.H., Knitel, M.J., van Langevelde, R., Klaassen, D.B.M., Tiemeijer, L.F., Scholten, A.J., Zegers-van Duijnhoven, A.T.A.: RF-CMOS performance trends. IEEE Transactions on Electron Devices 48(8), 1776–1782 (2001)
Ma, W., Kaya, S.: Study of RF Linearity in sub-50nm MOSFETs using Simulations. Journal of Computational Electronics 2, 347–352 (2003)
Kaya, S., Ma, W., Asenov, A.: Design of DG-MOSFETs for High Linearity Performance. In: IEEE International SOI Conference, pp. 68–69 (2003)
Sze, S.M.: Physics of Semiconductor Devices. Wiley, New York (1981)
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Narang, R., Saxena, M., Gupta, R.S., Gupta, M. (2011). Effect of Temperature and Gate Stack on the Linearity and Analog Performance of Double Gate Tunnel FET. In: Wyld, D.C., Wozniak, M., Chaki, N., Meghanathan, N., Nagamalai, D. (eds) Trends in Network and Communications. WeST NeCoM WiMoN 2011 2011 2011. Communications in Computer and Information Science, vol 197. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-22543-7_47
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DOI: https://doi.org/10.1007/978-3-642-22543-7_47
Publisher Name: Springer, Berlin, Heidelberg
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