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Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle

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Scientific Computing in Electrical Engineering SCEE 2010

Part of the book series: Mathematics in Industry ((TECMI,volume 16))

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Abstract

A hydrodynamic subband model for semiconductors has been formulated in (Mascali and Romano, IL NUOVO CIMENTO 33C:155163, 2010) by closing the moment system derived from the Schrödinger-Poisson-Boltzmann equations on the basis of the maximum entropy principle (MEP). Explicit closure relations for the fluxes and the production terms are obtained taking into account scattering of electrons with acoustic and non-polar optical phonons, as well as surface scattering. Here a suitable numerical scheme is presented for the above model together with simulations of a nanoscale silicon diode.

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References

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Acknowledgements

G. M. and V. R. acknowledge the financial support by P.R.A., University of Calabria and University of Catania, respectively.

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Authors and Affiliations

  1. Dipartimento di Matematica, Università della Calabria, Via Ponte Bucci, cubo 30 B, Arcavacata di Rende (Cs), Italy

    G. Mascali

  2. INFN-Gruppo c. Cosenza, Cosenza, Italy

    G. Mascali

  3. Dipartimento di Matematica e Informatica, Università di Catania, Viale A.Doria 6, I-95125, Catania, Italy

    V. Romano

Authors
  1. G. Mascali
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  2. V. Romano
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Correspondence to G. Mascali .

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Editors and Affiliations

  1. ONERA, avenue Édouard Belin 2, Toulouse, 31055, France

    Bastiaan Michielsen

  2. LAPLACE-ENSEEIHT, rue Charles Camichel 2, Toulouse, 31071, France

    Jean-René Poirier

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Mascali, G., Romano, V. (2012). Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle. In: Michielsen, B., Poirier, JR. (eds) Scientific Computing in Electrical Engineering SCEE 2010. Mathematics in Industry(), vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-22453-9_36

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