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Wet-Chemical Conditioning of Silicon Substrates for a-Si:H/c-Si Heterojunctions

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Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Part of the book series: Engineering Materials ((ENG.MAT.,volume 0))

Abstract

The influence of wet-chemical silicon (Si) substrate pre-treatments on surface morphology and electronic interface properties is discussed for various hetero interfaces of crystalline Si (c-Si) and Si oxides (SiOx), or amorphous materials such as Si (a-Si:H), Si nitride (a-SiNx:H) and Si carbide (a-SiC:H), which are typically applied in Si heterostructure solar cells. Combined application of surface sensitive techniques, the field-modulated surface photovoltage (SPV), ex-situ and in-situ photoluminescence (PL) measurements, atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry in the ultra-violet and visible region (UV-VIS-SE) and Fourier-Transform infrared ellipsometry (FTIR-SE), total hemispherical UV-NIR-reflectance measurements, microwave detected photo-conductance decay (μW-PCD) and quasi-steady-state photo conductance (QSSPC) provides detailed information about the influence of wet-chemical treatments on preparation induced micro-roughness, surface charge, energetic distribution of interface states D it(E) and the resulting interface recombination behaviour of wet-chemically passivated Si substrates with special surface morphology. The stability of wet-chemical surface passivation during storage in ambient air is found to be strongly influenced by the preparation-induced surface morphology. As shown for various heterojunction structures, the effect of optimized wet-chemical pre-treatments can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H, a-SiNx:H or a-SiC:H. As demonstrated for selected examples, the results of these investigations could be successfully used to enhance the energy conversion efficiency of heterojunction solar cells prepared on flat, saw damage etched and textured Si substrates. Implementation of optimised wet-chemical surface pre-treatments prior to a-Si:H deposition in (ZnO/a-Si:H(n)/c-Si(p)/Al) heterojunction solar cells with pyramidal texturisation increased significantly the solar cell parameters I sc, V oc, fill factor and enhanced the solar cell efficiency from 17.4% (confirmed) to 18.4%.

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References

  1. Eades, W.D., Swanson, R.M.: Calculation of surface generation and recombination velocities at the Si-SiO2 interface. J. Appl. Phys. 58, 4267–4276 (1985)

    Article  CAS  Google Scholar 

  2. Angermann, H.: Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment. Appl. Surf. Sci. 254, 8067–8074 (2008)

    Article  CAS  Google Scholar 

  3. Chabal, Y.J., Higashi, G.S., Raghavachari, K., Burrows, V.A.: Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology. J. Vac. Sci. Technol. A 7, 2104–2109 (1989)

    Article  CAS  Google Scholar 

  4. Intelmann, C.M., Hinrichs, K., Syritski, V., Yang, F., Rappich, J.: Recombination behaviour at the ultrathin polypyrrole film/silicon interface investigated by in-situ pulsed photoluminescence. Japanese Journal of Applied Physics, Part I: Regular Papers and Short Notes 47, 554–557 (2008)

    CAS  Google Scholar 

  5. Rappich, J., Fahoume, M.: Nonradiative recombination and band bending of p-Si(100) surface. Thin Solid Films (2005)

    Google Scholar 

  6. Aberle, A.G.: Surface passivation of crystalline silicon solar cells: a review. Progress in Photovoltaics: Research and Applications 8, 473–487 (2000)

    Article  CAS  Google Scholar 

  7. Nemanick, E.J., Hurley, P.T., Webb, L.J., Knapp, D.W., Michalak, D.J., Brunschwig, B.S., Lewis, N.S.: Chemical and Electrical Passivation of Single-Crystal Silicon(100) Surfaces through a Two-Step Chlorination/Alkylation Process. J. Phys. Chem. B 110, 14770–14778 (2006)

    Article  CAS  Google Scholar 

  8. Prise, J.B.: Anisotropic Etching of Silicon with KOH-H2O-Isopropyl Alcohol. In: Burges, R.R. (ed.) Semiconductor Silicon. The Electrochemical Society Proceeding Series, Princeton, NJ (1973)

    Google Scholar 

  9. Munoz, D., Carreras, P., Escarre, J., Ibarz, D., Martin de Nicolas, S., Voc, C., Asensi, J.M., Bertomeu, J.: Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD. Thin Solid Films 517, 3578 (2009)

    Google Scholar 

  10. Hylton, J.D., Burgers, A.R., Sinke, W.C.: Alkaline etching for reflectance reduction in multicrystalline silicon solar cells. J. Electrochem. Soc. 151, 408 (2004)

    Google Scholar 

  11. Weinreich, W., Acker, J., Gräber, I.: The effect of H2SiF6 on the surface morphology of textured multi-crystalline silicon. Semicond. Sci. Technol. 21, 1278–1286 (2006)

    Article  CAS  Google Scholar 

  12. Sievert, W.J., Zimmermann, K.-U., Starzynski, J.S.: Wafer Thinning Products. European Semiconductor 27, 17 (2005)

    Google Scholar 

  13. Kern, W.: The Evolution of Silicon Wafer Cleaning Technology. J. Electrochem. Soc. 137, 1887 (1990)

    Article  CAS  Google Scholar 

  14. Angermann, H., Henrion, W., Rebien, M., Fischer, D., Zettler, J.-T., Röseler, A.: H-terminated silicon: spectroscopic ellipsometry measurements correlated to the surface electronic properties. Thin Solid Films 313-314, 552–556 (1998)

    Google Scholar 

  15. Kim, W.-B., Matsomoto, T., Kobayashi, H.: Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method. Appl. Phys. Lett. 93, 072101–072103 (2008)

    Article  Google Scholar 

  16. Rappich, J., Timoshenko, V.Y., Dittrich, T.: In Situ Monitoring of Electrochemical Processes at the (100) p-Si/Aqueous NH4F Electrolyte Interface by Photoluminescence. J. Electrochem. Soc. 144, 493–496 (1997)

    Article  CAS  Google Scholar 

  17. Timoshenko, V.Y., Petrenko, A.B., Stolyarov, M.N., Dittrich, T., Fuessel, W., Rappich, J.: Quantitative analysis of room temperature photoluminescence of c-Si wafers excited by short laser pulses. Journal of Applied Physics 85, 4171–4175 (1999)

    Article  CAS  Google Scholar 

  18. Heilig, K.: Experimentelle Technik der Physik 14, 135 (1968)

    Google Scholar 

  19. Dittrich, T., Bitzer, T., Angermann, H., Flietner, H., Lewerenz, H.J.: Surface electronic properties of electrolytically hydrogen terminated Si(111). J. Electrochem. Soc. 141, 3595 (1994)

    Article  CAS  Google Scholar 

  20. Angermann, H.: Characterisation of wet-chemically treated silicon interfaces by surface photo-voltage measurements. Anal. Bioanal. Chem. 374, 676 (2002)

    Article  CAS  Google Scholar 

  21. Lauer, K., Laades, A., Übensee, H., Metzner, H., Lawerenz, A.: Detailed analysis of the microwavedetected photoconductance decay in crystalline silicon. J. Appl. Phys. 104, 104503 (2008)

    Article  Google Scholar 

  22. Laades, A., Brauer, J., Stürzebecher, U., Neckermann, K., Klimm, K., Blech, M., Lauer, K., Lawerenz, A., Angermann, H.: Wet-chemical treatment of solar grade CZ silicon prior to surface passivation. In: 24th European Solar Conference, Hamburg, Germany (2009) 2CV.2.61

    Google Scholar 

  23. Sinton, R.A., Cuevas, A.: Contactless Determination of Curent-Voltage Characteristics and Minority-Carrier Lifetimes in Semiconductors from Quasi-Steady-State Photoconductance Data. Appl. Phys. Lett. 69, 2510–2512 (1996)

    Article  CAS  Google Scholar 

  24. Swiatkowski, C., Sanders, A., Buhre, K.-D., Kunst, M.: Charge-carrier kinetics in semiconductors by microwave conductivity measurements. J. Appl. Phys. 78, 1763 (1995)

    Article  CAS  Google Scholar 

  25. Henrion, W., Rebien, M., Angermann, H., Röseler, A.: Spectroscopic Investigations of Hydrogen Termination, Oxide Coverage, Roughness, and Surface State Density of Silicon During Native Oxidation in Air. Appl. Surf. Sci. 202, 199 (2002)

    Article  CAS  Google Scholar 

  26. Henrion, W., Röseler, A., Angermann, H., Rebien, M.: Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces. Phys. Stat. Sol. (a) 175, 121 (1999)

    Article  CAS  Google Scholar 

  27. Heilig, K.: Method for reduction of hysteresis effects in MIS measurements. Solid State Electron. 27, 395–396 (1984)

    Article  CAS  Google Scholar 

  28. Lam, Y.W.: Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. I. J. Phys. D: Appl. Phys. 4, 1370–1375 (1971)

    Article  CAS  Google Scholar 

  29. Rappich, J., Zhang, X., Rosu, D.M., Schade, U., Hinrichs, K.: Passivation of Si surfaces investigated by in-situ photoluminescence techniques. Solid State Phenomena 156-158, 363–368 (2010)

    Google Scholar 

  30. Rappich, J., Zhang, X., Chapel, S., Sun, G., Hinrichs, K.: Passivation of Si surfaces by hydrogen and organic molecules investigated by in-situ photoluminescence techniques. Phys. Stat. Solidi. (c) 7, 161 (2010)

    Article  Google Scholar 

  31. Aspnes, D.E.: Optical response of microscopically rough surfaces. Phys. Rev. B 41, 10334–10343 (1990)

    Article  Google Scholar 

  32. Bruggeman, D.A.G.: Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. Annalen der Physik 5, 636 (1935)

    Article  Google Scholar 

  33. Yasuda, T., Aspnes, D.E.: Optical-standard surfaces of single-crystal silicon for calibrating ellipsometers and reflectometers. Appl. Opt. 33, 7435–7438 (1994)

    Article  CAS  Google Scholar 

  34. Aspnes, D.E.: Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry. J. Vac. Sci. Technol. 18, 289–295 (1981)

    Article  CAS  Google Scholar 

  35. Wünsch, F., Citarella, G., Abdallah, O., Kunst, M.: An inverted a-Si:H/c-Si hetero-junction for solar energy conversion. J. Non-Crystalline Solids 352, 1962–1966 (2006)

    Article  Google Scholar 

  36. Angermann, H., Wünsch, F., Kunst, M., Laades, A., Stürzebecher, U., Conrad, E., Korte, L., Schmidt, M.: Effect of wet-chemical substrate pre-treatment on electronic interface properties and recombination losses of a-Si:H/c-Si and a-SiNx:H/c-Si hetero-interfaces. Accepted by Phys. Stat. Sol. (2011)

    Google Scholar 

  37. Laades, A.: Preparation and Characterization of Amorphous/Crystalline Silicon Hetero-junctions, Fachbereich Physik. Technische Universität Berlin, Berlin (2005)

    Google Scholar 

  38. Angermann, H., Henrion, W., Röseler, A., Rebien, M.: Wet-chemical passivation of Si(111)- and Si(100)-substrates. Materials Science and Engineering B 73, 178–183 (2000)

    Article  Google Scholar 

  39. Angermann, H., Henrion, W., Rebien, M.: Electronic Properties of Wet-Chemically Prepared Oxide Layers. Solid State Phenomena 76-77,181–184 (2001)

    Google Scholar 

  40. Goetzberger, A., Heine, V., Nicollian, E.H.: Surface States in Silicon from Charges in the Oxide Coating. Appl. Phys. Lett. 12, 95–97 (1968)

    Article  CAS  Google Scholar 

  41. Poindexter, E.H., Geraldi, G.J., Rueckel, M.E., Caplan, P.J., Johnson, N.M., Biegelsen, D.K.: Electronic Traps and Pb Centers at the Si/SiO2 Interface: Band-gap Energy Distributuion. J. Appl. Phys. 56, 2844 (1984)

    Article  CAS  Google Scholar 

  42. Flietner, H.: Passivity and Electronic Properties of the Silicon/Silicondioxide Interface. Mat. Sci. Forum 185-188, 73–82 (1995)

    Google Scholar 

  43. Lenahan, P.M., Dressendorfer, P.V.: Hole traps and trivalent silicon centers in metal/oxide/silicon devices. J. Appl. Phys. 55, 3495–3499 (1984)

    Article  CAS  Google Scholar 

  44. Poindexter, E.H., Caplan, P.J., Deal, B.E., Radzouk, R.R.: Identification and properties of Pb-like centers in photoluminescent porous silicon. J. Appl. Phys. 52, 879 (1981)

    Article  CAS  Google Scholar 

  45. Angermann, H., Kliefoth, K., Füssel, W., Flietner, H.: Defect generation at silicon surfaces during etching and initial stage of oxidation. Microelectron. Eng. 28, 51–54 (1995)

    Article  CAS  Google Scholar 

  46. Angermann, H., Henrion, W., Rebien, M., Röseler, A.: Wet-chemical Preparation and Spectroscopic Characterization of Silicon Interfaces. Appl. Surf. Sci. 235, 322–329 (2004)

    Article  CAS  Google Scholar 

  47. Drucker, J., Bandari, A., Burrows, V.A.: Si(100) surface corrosion by NH4F studied using high electron imaging in a spatial resolution secondary UHV-STEM. In: Mater. Res. Soc. Symp. Proc., vol. 315, p. 479 (1993)

    Google Scholar 

  48. Neuwald, U., Hessel, H.E., Feltz, A., Memmert, U., Behm, R.J.: Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2x1)H reconstructed Si(100) terraces versus (111) facetting. Surf. Sci. Lett. 296, L8–L14 (1993)

    Article  Google Scholar 

  49. Angermann, H., Rappich, J., Klimm, C.: Wet-chemical treatment and electronic interface properties of silicon solar cell substrates. Central Europ. J. Phys. 7, 363–370 (2009)

    Article  CAS  Google Scholar 

  50. Angermann, H., Conrad, E., Korte, L., Rappich, J., Schulze, T.F., Schmidt, M.: Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer. Mat. Sci. Eng. B 159-160, 219–223 (2009)

    Google Scholar 

  51. Angermann, H., Laades, A., Stürzebecher, U., Conrad, E., Klimm, C., Schulze, T.F., Lawerenz, A., Korte, L.: Wet-chemical preparation of textured silicon solar cell substrates: Surface conditioning and electronic interface properties. In: To be Publish in Solid State Phenomena. Scitech Publ., Zuerich-Uettikon (2010)

    Google Scholar 

  52. Steinert, M., Acker, J., Oswald, S., Wetzing, K.: Study on the mechanism of silicon etching in HNO3-rich HF/HNO3 mixtures. J. Phys. Chem. C 111, 2122–2140 (2007)

    Article  Google Scholar 

  53. Nishimoto, Y., Ishahara, T., Namba, K.: Investigation of Acidic Texturization for Multicrystalline Silicon Solar Cells. J. Electrochem. Soc. 146, 457–461 (1999)

    Article  CAS  Google Scholar 

  54. Kulkarni, M.S., Erk, H.F.: Acid based etching of silicon wafers: mass-transfer and kinetic effects. J. Electrochem. Soc. 147, 176–188 (2000)

    Article  CAS  Google Scholar 

  55. Xi, Z., Yang, D., Que, D.: Texturization of monocrystalline silicon with tribasic sodium phosphate. Sol. Energ. Mat. Sol. Cells 77, 255–263 (2003)

    Article  CAS  Google Scholar 

  56. Sievert, W., Zimmermann, K.-U., Hartmann, B., Klimm, C., Jacob, K., Angermann, H.: Surface texturization and interface passivation of mono-crystalline silicon substrates by wet chemical treatments. Solid State Phenomena 145-146, 223–226 (2009)

    Google Scholar 

  57. Angermann H., Rappich J., Korte L., Sieber I., Conrad E., Schmidt M., Hübener K., Polte J., Hauschild J.: Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application. Appl. Surf. Sci. 254, 3615–3625 (2008).

    Google Scholar 

  58. Angermann, H., Rappich, J., Sieber, I., Hübener, K., Hauschild, J.: Smoothing and passivation of special Si(111) substrates: studied by SPV, PL, AFM and SEM measurements. J. Anal. Bioanal. Chem. 390, 1463–1470 (2008)

    Article  CAS  Google Scholar 

  59. Angermann, H., Korte, L., Rappich, J., Conrad, E., Sieber, I., Schmidt, M., Hübener, K., Hauschild, J.: Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment. Thin Solid Films 516, 6775–6781 (2008)

    Article  CAS  Google Scholar 

  60. Bitzer, T., Lewerenz, H.J.: In situ preparation of hydrogen-terminated silicon single-crystal surfaces. Surf. Sci. 269/270, 886 (1992)

    Article  Google Scholar 

  61. Okorn-Schmidt, H.F.: Characterization of silicon surface preparation processes for advanced gate dielectrics. IBM J. Res. Develop. 43, 351–366 (1999)

    Article  CAS  Google Scholar 

  62. Lewerenz, H.J., Bitzer, T.: Electrolytic hydrogenation of silicon. J. Electrochem. Soc. 139, L21 (1992)

    Google Scholar 

  63. Noguchi, H., Adachi, S.: Chemical treatment effects of silicon surfaces in aqueous KF solution. Appl. Surf. Sci. 246, 139–148 (2005)

    Article  CAS  Google Scholar 

  64. Yang, S.K., Peter, S., Takoudis, C.G.: Fundamentals of Two-step Etching Techniques for Ideal Silicon-hydrogen Termination of Silicon (111). J. Appl. Phys. 76, 4107–4112 (1994)

    Article  CAS  Google Scholar 

  65. Morita, M., Ohmi, T., Hasegawa, E., Kavakami, M., Suma, K.: Control factor of native oxide growth on silicon in air or in ultrapure water. Appl. Phys. Lett. 55, 562–564 (1989)

    Article  CAS  Google Scholar 

  66. Gräf, D., Grundner, M., Schulz, R.: Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces. J. Vac. Sci. Technol. A 7, 808–813 (1989)

    Article  Google Scholar 

  67. Kolìbal, M., Čechal, J., Bartošìk, M., Mach, J., Šikola, T.: Stability of hydrogen-terminated vicinal Si(1 1 1) surface under ambient atmosphere. Appl. Surf. Sci. 256, 3423–3426 (2010)

    Article  Google Scholar 

  68. Zhao, L., Zhou, C., Li, H., Diao, H., Wang, W.: Characterization on the Passivation Stability of HF Aqueous Solution Treated Silicon Surfaces for HIT Solar Cell Application by the Effective Minority Carrier Lifetime Measurement. Chin. J. Phys. 48, 392–399 (2010)

    CAS  Google Scholar 

  69. Angermann, H., Henrion, W., Rebien, M., Röseler, A.: Wet-chemical passivation and characterization of silicon interfaces for solar cell applications. Sol. Energy Mat. Sol. Cells 83, 331–346 (2004)

    Article  CAS  Google Scholar 

  70. Rappich, J.H.P., Nickel, N.H., Sieber, I., Schulze, S., Dittrich, T.: Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers. Microelectronic Engineering 80, 62–65 (2005)

    Article  CAS  Google Scholar 

  71. Aureau, D., Rappich, J., Moraillon, A., Allongue, P., Ozanam, F., Chazalviel, J.-N.: In situ monitoring of the electronic properties and the pH stability of grafted Si(111). J. Electroanal. Chem. 646, 33–42 (2010)

    Article  CAS  Google Scholar 

  72. Schmidt, H.F., Meuris, M., Mertens, P.W., Rotondaro, A.L.P., Heyns, M.M., Hurd, T.Q., Hachter, Z.: H2O2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity. Jpn. J. Appl. Phys. 34, 727–731 (1995)

    Article  CAS  Google Scholar 

  73. Ohmi, T., Miyashita, M., Itano, M., Imaoka, T., Kawanabe, I.: Dependence of thin-oxide films quality on surface microroughness. IEEE Trans. Electron Devices 39, 537–545 (1992)

    Article  CAS  Google Scholar 

  74. Akiyama, K., Naito, N., Nagamori, M., Koya, H., Morita, E., Sassa, K., Suga, H.: Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics. Jpn. J. Appl. Phys. 34, L153–L155 (1995)

    Google Scholar 

  75. Allongue, P., de Villeneuvea, C.H., Morin, S., Boukherroub, R., Wayner, D.D.M.: The preparation of flat H-Si(111) surfaces in 40% NH4F revisited. Electrochimica Acta 45, 4591–4598 (2000)

    Article  CAS  Google Scholar 

  76. Schmidt, M., Korte, L., Laades, A., Stangl, R., Schubert, C., Angermann, H., Conrad, E., van Maydell, K.: Physical aspects of a-Si:H/c-Si hetero-junction solar cells. Thin Solid Films 515, 7475–7480 (2007)

    Article  CAS  Google Scholar 

  77. Becker, J.-P., Pysch, D., Leimenstoll, A., Hermle, M., Glunz, S.W.: Wet-Chemical Pre-Treatment of c-Si Substrates Enhancing the Performance of a-Si:H/c-Si Hetero-Junction Solar Cells. In: 24th European PV Solar Energy Conference and Exhibition, Hamburg, Germany (2009)

    Google Scholar 

  78. Angermann, H., Schulze, T.F., Conrad, E., Rappich, J., Korte, L., Schmidt, M.: Cleaning and passivation of structured n-type Si substrates: preparation and interface properties of a-Si:H/c-Si hetero solar cells. In: Lincot, D. (ed.) 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, pp. 1422–1426. WIP Renewable Energies, München (2008)

    Google Scholar 

  79. Korte, L., Conrad, E., Angermann, H., Stangl, R., Schmidt, M.: Overview on a-Si:H/c-Si heterojunction solar cells - physics and technology. In: 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, pp. 859–865 (2007)

    Google Scholar 

  80. Taira, S., Yoshimine, Y., Baba, T., Taguchi, M., Kanno, H., Kinoshita, T., Sakata, H., Maruyama, E., Tanaka, M.: Our Approaches for Achieving HIT Solar Cells With More Than 23% Efficiency. In: 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, pp. 932–935 (2007)

    Google Scholar 

  81. Scherff, M.L.D., Froitzheim, A., Ulyashin, A., Schmidt, M., Fahrner, W.R., Fuhs, W.: 16.2% Efficiency for amorphous/crystalline heterojunction solar cells on flat p-type silicon wafers. In: PV in Europe - From PV Technology to Energy Solutions, Rome, Italy, p. 7 (2002)

    Google Scholar 

  82. Angermann, H., Uredat, S., Zettler, J.-T.: Surface Texturization and Interface Passivation of Mono- and Polycrystalline Silicon Substrates: Evaluation of the Wet-Chemical Treatments by UV-NIR-Reflectance. In: 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, pp. 1954–1957 (2009)

    Google Scholar 

  83. Tsunomura, Y., Yoshimine, Y., Taguchi, M., Baba, T., Kinoshita, T., Kanno, H., Sakata, H., Maruyama, E., Tanaka, M.: Twenty-two percent efficiency HIT solar cell. Sol. Energy Mater. Sol. Cells 93, 670–673 (2009)

    Article  CAS  Google Scholar 

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  1. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium-Photovoltaik, Kekuléstraße 5, D-12489, Berlin, Germany

    Heike Angermann & Jörg Rappich

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  1. Heike Angermann
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  1. Copernicus Institute Science Technology and Society, Utrecht University, Budapestlaan 6, 3584 CD, Utrecht, The Netherlands

    Wilfried G. J. H. M. van Sark

  2. Inst. Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, 12489, Berlin, Germany

    Lars Korte

  3. ENEA - Agenzia Nazionale per le Nuove Tecnologie, l’Energia e lo Sviluppo Economico Sostenibile, Unità Tecnologie Portici, Localitá Granatello P. le E. Fermi, Portici, 80055, Napoli, Italy

    Francesco Roca

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Angermann, H., Rappich, J. (2012). Wet-Chemical Conditioning of Silicon Substrates for a-Si:H/c-Si Heterojunctions. In: van Sark, W.G.J.H.M., Korte, L., Roca, F. (eds) Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Engineering Materials, vol 0. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-22275-7_3

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