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Interface Electronic Differences Between Epitaxial Graphene Systems Grown on the Si and the C Face of SiC

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GraphITA 2011

Part of the book series: Carbon Nanostructures ((CARBON))

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Abstract

We use the local density approximation of the density functional theory to perform a comparative analysis between the bonding interactions of the epitaxial graphene/SiC interface in the case of Si and C face growth [i.e. growth on the SiC(0001) and the \(\hbox{SiC}(000\bar{1})\) surfaces respectively]. We argue that when the SiC substrate below the graphene films reconstructs with no additional adatoms, the observed electronic differences are the outcome of an interplay between \(sp^2\) and \(sp^3\) hybridization of the interface atoms. We find a strong preferential disposition towards an \(sp^2\) hybridization for the case of the C face, whereas towards the \(sp^3\) scheme for the Si face. Notwithstanding purely quantitative, this mismatch is important and reflects the strength of the \(\pi\) bond in Si and C.

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Acknowledgements

This work has been partially supported by the European Science Foundation (ESF) under the EUROCORES Programme EuroGRAPHENE CRP GRAPHIC-RF. Computations have been performed at the CINECA supercomputing facilities under project TRAGRAPH.

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Authors and Affiliations

  1. CNR-IMM, VIII strada 5, 95121, Catania, Italy

    I. Deretzis & A. La Magna

Authors
  1. I. Deretzis
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  2. A. La Magna
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Corresponding authors

Correspondence to I. Deretzis or A. La Magna .

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Editors and Affiliations

  1. , Dipartimento di Fisica, FISICA Università dell’Aquila (ITALY), Via Vetoio 10, Coppito-L'Aquila, 67100, Italy

    Luca Ottaviano

  2. CNR - IMM Sezione di Bologna, via Gobetti 101, Bologna, 40129, Italy

    Vittorio Morandi

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Deretzis, I., Magna, A.L. (2012). Interface Electronic Differences Between Epitaxial Graphene Systems Grown on the Si and the C Face of SiC. In: Ottaviano, L., Morandi, V. (eds) GraphITA 2011. Carbon Nanostructures. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-20644-3_7

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