Abstract
The most promising device in the Nano scale range are based on multiple gate structures such as double- gate (DG) MOSFETs. These devices could be used for high frequency applications due to the significant increase of the transition frequency f T for these devices. For low noise radiofrequency applications, high frequency noise models are required. In this paper, compact channel noise models valid in all regions of operation for Double Gate (DG) MOSFETs have been developed and experimentally verified. Our compact channel noise model of a DG MOSFET includes the physics based expressions for thermal noise, flicker noise and the corner frequency. Using this model the DG MOSFET noise performances are studied.
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References
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© 2011 Springer-Verlag Berlin Heidelberg
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Panda, S., Kanjilal, M.R. (2011). Thermal and Flicker Noise Modelling of a Double Gate MOSFET. In: Das, V.V., Thankachan, N., Debnath, N.C. (eds) Advances in Power Electronics and Instrumentation Engineering. PEIE 2011. Communications in Computer and Information Science, vol 148. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-20499-9_7
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DOI: https://doi.org/10.1007/978-3-642-20499-9_7
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-20498-2
Online ISBN: 978-3-642-20499-9
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