Field Emission from Quantum-Confined Optoelectronic Semiconductors
With the advent of modern nanodevices, there has been considerable interest in studying the electric field-induced processes in semiconductors having different band structures. It appears from the literature that the studies have been made on the assumption that the carrier dispersion laws are invariant quantities in the presence of intense electric field, which is not fundamentally true. In this chapter, we shall study the FNFE from quantum-confined optoelectronic semiconductors under strong electric field. In Sect. 6.2.1, the FNFE from the bulk specimens said compounds under strong electric field has been investigated in the presence of magnetic quantization whose unperturbed electron energy spectra are, respectively, defined by the three- and two-band models of Kane together with parabolic energy bands. Section 6.2.2 contains the investigation of the FNFE from quantum wires of optoelectronic semiconductors. In Sect. 6.2.3, the FNFE field emission from effective mass superlattices of optoelectronic semiconductors in the presence of strong electric field under magnetic quantization has been studied. In Sect. 6.2.4, we have investigated the FNFE from quantum wire effective mass superlattices of optoelectronic semiconductors. In Sect. 6.2.5, FNFE from superlattices of optoelectronic compounds with graded interfaces under magnetic quantization has been investigated. In Sect. 6.2.6, the FNFE from quantum wire superlattices of optoelectronic semiconductors with graded interfaces has been studied. Section 6.3 contains the result and discussions pertinent to this chapter. Section 6.4 presents a single challenging open research problem.
KeywordsDispersion Relation External Electric Field Quantum Wire Field Current Strong Electric Field
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