Field Emission from Quantum-Confined III–V Semiconductors in the Presence of LightWaves
In the presence of strong light waves, the basic band structure of a semiconductor changes profoundly and consequently all the physical properties get radically modified. In this chapter, in Sect.5.2.1, the field emission under magnetic quantization from the III–V compounds has been investigated in the presence of external photoexcitation whose unperturbed electron energy spectra are, respectively, defined by the three- and two-band models of Kane together with parabolic energy bands and the importance of III–V semiconductors have already been written in Chap.1. In Sect.5.2.2, the FNFE in the presence of light waves from quantum wires of III–V semiconductors has been studied. In Sect.5.2.3, the FNFE from effective mass super lattices whose constituent materials are III–V semiconductors has been investigated in the presence of light waves under magnetic quantization. The FNFE from quantum wire effective mass super lattices of the said materials in the presence of light waves has been studied in Sect.5.2.4. The FNFE from superlattices of III–V semiconductors with graded interfaces in the presence of light waves under magnetic quantization has been investigated in Sect.5.2.5. The FNFE from quantum wire superlattices of the said materials with graded interfaces in the presence of light waves has been studied in Sect.5.2.6. Section5.3 contains result and discussions. Section5.4 presents open research problems pertinent to this chapter.
KeywordsMagnetic Field Electron Concentration Light Wave Quantum Wire Inversion Layer
- 1.K.P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and Their nanostructures, Springer Series in Materials Science, vol. 116 (Springer-Verlag, Berlin, 2008)Google Scholar