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Field Emission from Quantum-Confined III–V Semiconductors in the Presence of LightWaves

  • Sitangshu BhattacharyaEmail author
  • Kamakhya Prasad GhatakEmail author
Chapter
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 170)

Abstract

In the presence of strong light waves, the basic band structure of a semiconductor changes profoundly and consequently all the physical properties get radically modified. In this chapter, in Sect.5.2.1, the field emission under magnetic quantization from the III–V compounds has been investigated in the presence of external photoexcitation whose unperturbed electron energy spectra are, respectively, defined by the three- and two-band models of Kane together with parabolic energy bands and the importance of III–V semiconductors have already been written in Chap.1. In Sect.5.2.2, the FNFE in the presence of light waves from quantum wires of III–V semiconductors has been studied. In Sect.5.2.3, the FNFE from effective mass super lattices whose constituent materials are III–V semiconductors has been investigated in the presence of light waves under magnetic quantization. The FNFE from quantum wire effective mass super lattices of the said materials in the presence of light waves has been studied in Sect.5.2.4. The FNFE from superlattices of III–V semiconductors with graded interfaces in the presence of light waves under magnetic quantization has been investigated in Sect.5.2.5. The FNFE from quantum wire superlattices of the said materials with graded interfaces in the presence of light waves has been studied in Sect.5.2.6. Section5.3 contains result and discussions. Section5.4 presents open research problems pertinent to this chapter.

Keywords

Magnetic Field Electron Concentration Light Wave Quantum Wire Inversion Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    K.P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and Their nanostructures, Springer Series in Materials Science, vol. 116 (Springer-Verlag, Berlin, 2008)Google Scholar
  2. 2.
    H. Sasaki, Phys. Rev. B 30, 7016 (1984)ADSCrossRefGoogle Scholar
  3. 3.
    H.X. Jiang, J.Y. Lin, J. Appl. Phys. 61, 624 (1987)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Ctr. Electronics Design and Technology Nano Scale Device Research LaboratoryIndian Institute of ScienceBangaloreIndia
  2. 2.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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