Abstract
In this paper, a integrated gate drive circuit of reverse-conducting GCT with 1100A/4500V is analyzed and designed. Firstly, the turn-on and turnoff circuit is analyzed and designed according to the requirment of device drive, and using PSPICE to make simulation, moreover, the influence of inductance L1 and L2, capacitor Coff and switching Qoff parameters to the gate drive current were analyzed, as well as the analysis and optimization of these parameters. And then, for FPGA, as the core control chip of the control circuit, using the software QuartusΠ to writing code and completing the function simulation. Finally, get a complete GCT integrated gate drive circuit with the turn-on and turn-off circuit and the logic control circuit, and provide a design method for the development of driving circuit design of integrated GCT.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Tong, Y., Zhang, C.: The influence of Anti-parallel diode to turn-off process of IGCT. The Journal Of Electrical Technology 22(11) (2007)
Steimer, P., Apeldoorn, O., Carroll, E.: Nagel A: IGCT Technology Baseline and Furture Opportunities. IEEE/PES 2(2) (2001)
Bernet, S., Teichmann, R.: Comparion of High -Power IGBT’s Hard-Driver GTO’s for High Power Inverters. IEEE, Transactions on Industry Application, 711–718 (1998)
Zhang, C.: Rearch On Gate Drive Circuit Of Integrated Gate Commutated Thysistor. Peking Communication University (2007)
Klaka, S., Linder, S., Frecker, M.: A Family of Reverse Conducting Gate Commutated Thysitors for Mediu Voltage Drive Applications. In: PCIM, Hong Kong, pp. 1–11 (October 1997)
Huang, X., Zhang, X., Xie, L.: Design Of Drive Unit Control Circuit GCT. The High Power Converter Technology (1), 9–13 (2009)
Zhuang, L., Jin, X., Wu, X., Xie, L., Huang, X.: Rearch on a Novel Gate Circuit of Integrated Gate Commutated Thysitor. Communication Technology And Electric Traction (2), 16–20 (2008)
Qiu, C., Qiu, R.-c.: Research on a Novel Gate Drive Circuit of Integrated Gate Commutated Thyristor
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2011 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
An, T., Zhang, X., Zhang, R., Yin, Q. (2011). Analysis and Design on Drive Circuit of Integrated Gate Commutated Thyristor. In: Lee, J. (eds) Advanced Electrical and Electronics Engineering. Lecture Notes in Electrical Engineering, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19712-3_7
Download citation
DOI: https://doi.org/10.1007/978-3-642-19712-3_7
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-19711-6
Online ISBN: 978-3-642-19712-3
eBook Packages: EngineeringEngineering (R0)