Abstract
In this paper, a integrated gate drive circuit of reverse-conducting GCT with 1100A/4500V is analyzed and designed. Firstly, the turn-on and turnoff circuit is analyzed and designed according to the requirment of device drive, and using PSPICE to make simulation, moreover, the influence of inductance L1 and L2, capacitor Coff and switching Qoff parameters to the gate drive current were analyzed, as well as the analysis and optimization of these parameters. And then, for FPGA, as the core control chip of the control circuit, using the software QuartusΠ to writing code and completing the function simulation. Finally, get a complete GCT integrated gate drive circuit with the turn-on and turn-off circuit and the logic control circuit, and provide a design method for the development of driving circuit design of integrated GCT.
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© 2011 Springer-Verlag Berlin Heidelberg
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An, T., Zhang, X., Zhang, R., Yin, Q. (2011). Analysis and Design on Drive Circuit of Integrated Gate Commutated Thyristor. In: Lee, J. (eds) Advanced Electrical and Electronics Engineering. Lecture Notes in Electrical Engineering, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19712-3_7
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DOI: https://doi.org/10.1007/978-3-642-19712-3_7
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-19711-6
Online ISBN: 978-3-642-19712-3
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