Abstract
The electric performance of static induction transistor (SIT) is dependent strongly on the channel parameters of device. The ratio of is an essential combined channel parameter not only for I-V characteristics but also for the high-current performance of device especially for the high frequency SIT (HF SIT), which are researched in this article. The pinch factor is also a key combined channel parameter embodies the general control criterion of fabrication parameters in determining whether it is a mixed, triode-like or pentode-like I-V characteristic which are also studied in detail. A great deal of experimental results is given which are available and convenient for design and fabrication of HF SIT, particularly for mixed I-V non-saturating characteristics.
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© 2011 Springer-Verlag Berlin Heidelberg
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Ju, J., Zhang, W., Du, H., Jiang, Y., Yang, T., Zhang, Y. (2011). Study on Channel Parameters of Static Induction Transistor. In: Zeng, D. (eds) Future Intelligent Information Systems. Lecture Notes in Electrical Engineering, vol 86. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19706-2_57
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DOI: https://doi.org/10.1007/978-3-642-19706-2_57
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-19705-5
Online ISBN: 978-3-642-19706-2
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