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Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM

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Low Power and Reliable SRAM Memory Cell and Array Design

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 31))

Abstract

In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error has been a major concern for soft-errors in memories until late 1980s. Threat from environmental neutron-induced soft-error is growing with a rapid pace from early 1990s as device scaling proceeds. General features in charge collection mode soft-errors are reviewed and analyzed based on simulation results from the Monte Carlo soft-error simulator CORIMS. Combining with conventional charge collection mechanisms causing soft-error in SRAMs, new bipolar error mechanisms are confirmed under high-energy neutron-accelerated tests. The error mode is initially referred as “battery effect” and then referred as multi-coupled bipolar interaction (MCBI), based on theoretical/simulation studies with 2- or 4-bit 3D SRAM models. Countermeasure combining error correction code (ECC) and interleave turned out to be robust against this novel error mode.

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  1. Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida, Totsuka, Yokohama, Kanagawa, 244-0817, Japan

    Eishi Ibe

  2. Measurement Systems Research Department, Central Research Laboratory, Hitachi Ltd., 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo, 180-8601, Japan

    Kenichi Osada

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  1. The University of Electro-Communications, Chofugaoka, Chofu 1-5-1, Tokyo, 182-8585, Japan

    Koichiro Ishibashi

  2. Hitachi Ltd., Higashi-koigakubo 1-280, Kokubunji-shi, Tokyo, 185-8601, Japan

    Kenichi Osada

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Ibe, E., Osada, K. (2011). Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM. In: Ishibashi, K., Osada, K. (eds) Low Power and Reliable SRAM Memory Cell and Array Design. Springer Series in Advanced Microelectronics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19568-6_6

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  • DOI: https://doi.org/10.1007/978-3-642-19568-6_6

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