Abstract
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
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© 2011 IFIP International Federation for Information Processing
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Kiazadeh, A., Rocha, P.R., Chen, Q., Gomes, H.L. (2011). Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles. In: Camarinha-Matos, L.M. (eds) Technological Innovation for Sustainability. DoCEIS 2011. IFIP Advances in Information and Communication Technology, vol 349. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19170-1_65
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DOI: https://doi.org/10.1007/978-3-642-19170-1_65
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