Abstract
The samples of porous silicon were received by a method of an electrochemical etching. Follow-up this samples were processed by plasma chemical methods in fluorine and hydrogen [1]. At study of electronic properties of porous silicon (Por-Si) was is remarked that on contacts of a slotted type of some samples there is an electromotive force (EMF) U. Magnitude and sign U depend also on geometry of contacts and their disposition on a surface of a material.
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Yu.A. Vashpanov, V.A. Smyntyna 1-st the Ukrainian scientific conference on physics of semiconductors, Odessa, 2002, Plenary reports, vol. 1, p. 40–41.
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Vashpanov, Y.A. (2004). Adsorption Sensitivity of Microporus Silicon to Organic and Biomolecules with High Dipole Moment. In: Knobloch, H., Kaminorz, Y. (eds) MicroNano Integration. VDI-Buch. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18727-8_27
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DOI: https://doi.org/10.1007/978-3-642-18727-8_27
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