Abstract
The possibility to incorporate impurities in the semiconductor crystal to change its optical and electrical properties is of paramount importance for the applications of semiconductors. The incorporation of an impurity to the semiconductor crystal corresponds to an effective addition of a charge carrier and a charged impurity ion to the system. The impurities will give rise to localized states in the forbidden energy gap. Based on the energy separation between the localized state and the band edge, the impurities are referred to as deep or shallow states.
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© 2004 Springer-Verlag Berlin Heidelberg
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Holtz, P.O., Zhao, Q.X. (2004). Impurities in Bulk. In: Impurities Confined in Quantum Structures. Springer Series in Materials Science, vol 77. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18657-8_3
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DOI: https://doi.org/10.1007/978-3-642-18657-8_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-62228-1
Online ISBN: 978-3-642-18657-8
eBook Packages: Springer Book Archive