Abstract
In this work we investigate self-heating effects in nanowire FETs. We find that, as in the case of FD SOI devices, the velocity overshoot effect of the carriers in the channel and reduced number of scattering events with phonons lead to smaller ON-current degradation in short compared to long channel nanowire transistors.
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Vasileska, D., Hossain, A., Raleva, K., Goodnick, S.M. (2011). Is Self-Heating Important in Nanowire FETs?. In: Dimov, I., Dimova, S., Kolkovska, N. (eds) Numerical Methods and Applications. NMA 2010. Lecture Notes in Computer Science, vol 6046. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_13
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DOI: https://doi.org/10.1007/978-3-642-18466-6_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-18465-9
Online ISBN: 978-3-642-18466-6
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