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Vibrational Absorption of Quasi-substitutional Atoms and Other Centres

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Optical Absorption of Impurities and Defects in Semiconducting Crystals

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 169))

Abstract

This chapter deals almost only with the absorption of centres produced in semiconductors during irradiation with γ-rays and fast electrons or neutrons or during subsequent annealing treatments. Together with PL studies, this domain has been actively investigated because electrical measurements are usually difficult to perform after irradiation treatments due to the high resistivity of the samples. Technically, the observed spectra generally depend on the irradiation temperature, and as for the ESR and electronic spectra in these materials, an integrated set-up can be required allowing to perform the optical measurement at the temperature of irradiation when it is below room temperature. A large number of LVMs associated with radiation defects has been reported, especially in silicon. The interpretation of these LVMs can be far from simple because of the possible overlap of some bands and also because of some metastability effects. Potential modelling of the related centres can also be made hard because of the diversity of the possible atomic structures. In this respect, the use of quasi-monoisotopic crystals and the doping with selected isotopes has been of a great help.

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Notes

  1. 1.

    In [21], the contents of pages 970 and 971 are inverted.

  2. 2.

    In the original paper, the frequency was given as \(887\,{\mathrm{cm}}^{-1}\).

  3. 3.

    In [25], the \(V{ \mathrm{O}}_{2}\) centre is simply noted \({A}^{{\prime}}\), with reference to \(V\)O, often noted \(A\) at that time.

  4. 4.

    The frequency of the lowest energy mode is close to one of the LVMs associated with \(({\mathrm{C}}_{\mathrm{i}}{\mathrm{O}}_{\mathrm{i}})\) shown in Fig. 7.1, associated with the (\(V\)O) modes.

  5. 5.

    In [55, 58–61] this mode is noted \(C\).

  6. 6.

    There exists a defect made of two contiguous C atoms, whose hydrogenated form \({\mathrm{HC}}_{\mathrm{i}}{\mathrm{C}}_{\mathrm{s}}\) gives the PL \(T\)-line at 935.1 meV (see Sect. 8.4.2.1).

  7. 7.

    In the papers quoted in this section, the IR \({\mathrm{A}}^{{\prime}}\) and \({\mathrm{A}}^{{\prime\prime}}\) of \({C}_{1\mathrm{h}}\) are noted \(A\) and \(B\), respectively.

  8. 8.

    This is apparently the only reference where the Si-A17 spectrum is mentioned.

  9. 9.

    In silicon, LVMs denoted as C(1) are related to the \({\mathrm{C}}_{\mathrm{i}}\) split interstitial configuration (see Sect. 7.2.1).

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Pajot, B., Clerjaud, B. (2013). Vibrational Absorption of Quasi-substitutional Atoms and Other Centres. In: Optical Absorption of Impurities and Defects in Semiconducting Crystals. Springer Series in Solid-State Sciences, vol 169. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18018-7_7

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