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Absorption of Deep Centres and Bound Excitons

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Optical Absorption of Impurities and Defects in Semiconducting Crystals

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 169))

Abstract

The deep centres are intrinsic or extrinsic complexes or isolated FAs with ground-state levels deep in the band gap, hence their name. They give rise to relatively high-energy transitions whose excited states cannot be described by donor or acceptor EMT. They can be found in some as-grown crystals, but they are also produced by irradiation with h-e particles or γ-rays, or associated with TMs introduced in the crystals. When their concentration is dominant, the resistivity of the material can reach the intrinsic resistivity and classical resistivity measurements are difficult to perform on such materials. These centres are characterized by the position(s) of their energy level(s) in the band gap, by their point-group symmetries, and by their isotopic distributions. In semiconductors, many high-energy absorption lines are also due to the creation of excitons bound to defects whose electronic properties are only roughly understood, but these lines can bring useful information on the nature of these defects, for instance by their electronic isotope shifts or splitting under a uniaxial stress.

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Notes

  1. 1.

    In [27], a misprint has inverted the attributions of V 2  +  and \({V }_{2}^{-}\).

  2. 2.

    In [39], the ZPLs are noted \({\mathrm{X}}_{\mathit{yz}}^{x}\) or \({\mathrm{B}}_{\mathit{yz}}^{x}\) by specifying the BE energy xy.z with respect to that of the excitonic gap \({E}_{\mathit{gx}}\) in silicon (1155 meV). The ZPL line at 1040 meV is thus noted X50 11, corresponding to \({E}_{\mathit{gx}} - 115\,\mathrm{meV}\).

  3. 3.

    This profile is observed in the whole series of 2-mm-thick FZ samples irradiated at the same energy.

  4. 4.

    Not to be confused with the H3 line, due to \(V{ \mathrm{N}}_{2}^{0}\), nearly at the same energy.

  5. 5.

    This centre should not be confused with an ESR \(\mathrm{S} = 1/2\) centre, also labelled N3 ([148], and references therein), assumed to involve Ns and an O atom.

  6. 6.

    The energy given for the V N0 ZPL is taken from [154]. In this reference, a ZPL at 575.97 nm (2152.6 meV) not related to V N0 has also been reported.

  7. 7.

    To point out again the redundancy in energy between ZPLs associated with different centres, a ZPL at 2463 meV (503.4 nm) almost coinciding with the H3 and 3H ZPLs has been observed in PL together with a ZPL at 2429 meV (510.4 nm) in some natural diamonds, and ascribed to a centre labelled S1 ([95], and references therein).

  8. 8.

    In [171], the 28Si, 29Si, and 30Si components of the 1 → 4 transition were noted A, C, and E, respectively, and those of the 2 → 4 transition B, D, and F, respectively. For the 1  →  3 and 2 → 3 transitions, the same lettering was used, but primed (A′, C′, E′ and B′, D′, F′).

  9. 9.

    First Hund’s rule states that when two levels with the same electron configuration coexist, the one with the highest spin is the deepest.

  10. 10.

    E was for electron and L for Laboratoire d’Électronique Appliquée, Martin et al.’s affiliation.

  11. 11.

    In [189], EL2 is noted “O”.

  12. 12.

    The band structure of GaAs is qualitatively similar to the one of CdTe, shown in Fig. 2.6.

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Pajot, B., Clerjaud, B. (2013). Absorption of Deep Centres and Bound Excitons. In: Optical Absorption of Impurities and Defects in Semiconducting Crystals. Springer Series in Solid-State Sciences, vol 169. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18018-7_4

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