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A Temperature-Aware Time-Dependent Dielectric Breakdown Analysis Framework

  • Dimitris Bekiaris
  • Antonis Papanikolaou
  • Christos Papameletis
  • Dimitrios Soudris
  • George Economakos
  • Kiamal Pekmestzi
Part of the Lecture Notes in Computer Science book series (LNCS, volume 6448)

Abstract

The shrinking of interconnect width and thickness, due to technology scaling, along with the integration of low-k dielectrics, reveal novel reliability wear-out mechanisms, progressively affecting the performance of complex systems. These phenomena progressively deteriorate the electrical characteristics and therefore the delay of interconnects, leading to violations in timing-critical paths. This work estimates the timing impact of Time-Dependent Dielectric Breakdown (TDDB) between wires of the same layer, considering temperature variations. The proposed framework is evaluated on a Leon3 MP-SoC design, implemented at a 45nm CMOS technology. The results evaluate the system’s performance drift due to TDDB, considering different physical implementation scenarios.

Keywords

Reliability Time-Dependent Dielectric Breakdown Inter-Metal Dielectric Leakage Timing 

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Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • Dimitris Bekiaris
    • 1
  • Antonis Papanikolaou
    • 1
  • Christos Papameletis
    • 1
  • Dimitrios Soudris
    • 1
  • George Economakos
    • 1
  • Kiamal Pekmestzi
    • 1
  1. 1.Microprocessors and Digital Systems LabNational Technical University of AthensAthensGreece

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