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Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

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Semiconductor-On-Insulator Materials for Nanoelectronics Applications

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Abstract

The stacking of crystal semiconductor thin films alternated with dielectric layers continuously arouses a sustained interest for its utility in three-dimensional (3D) integration of metal-oxide-semiconductor field-effect transistor (MOSFET). However, the growth of crystalline silicon without resorting to epitaxial growth from a crystal seed still constitutes an unresolved challenge. Although many different techniques ranging from solid-phase crystallization to thin-film bonding constitutes possible solutions with their respective advantages and weaknesses, little attention has been paid so far to the adaptation of a technique widely used for producing semiconductor nanowires, namely, the vapor–liquid–solid (VLS) catalytic growth. The basic idea developed in this chapter is to control VLS growth for synthesizing local silicon-on-insulator (SOI) layers at reduced thermal budget. Confined VLS growth is therefore proposed to produce single crystalline silicon (c-Si) film over an amorphous oxide layer, without crystalline seeding. It is demonstrated that VLS growth in the spatial confinement of a cavity produces nanometer-thick c-Si ribbons over a micron area scale with a well controlled localization. The nature of grown silicon layers is characterized by SEM (Scanning Electron Microscopy), EBSD (Electron Backscattered Diffraction) and STEM (Scanning Transmission Electron Microscopy) to analyze its crystallinity and to check the impact of the confining cavity walls on the purity of grown silicon. Beyond the in-depth structural analysis of VLS grown nanoribbons, simple back-gated MOSFET structures have been fabricated and electrically characterized to extract transport properties. The obtained hole mobility of 53 cm2 s−1 V−1 constitutes an excellent compromise for a processing temperature less or equal to 500°C.

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Authors and Affiliations

  1. Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN-CNRS, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq, France

    A. Lecestre & E. Dubois

  2. STMicroelectronics, 850 Rue Jean Monnet, 38926, Crolles Cedex, France

    A. Lecestre, A. Villaret & T. Skotnicki

  3. CEA-LITEN, 17 Avenue des Martyrs, 38054, Grenoble, France

    P. Coronel

  4. Laboratoire de Photonique et de Nanostructures, LPN-CNRS, Route de Nozay, 91460, Marcoussis, France

    G. Patriarche

  5. Ecole des Mines, Centre SMS, PECM-UMR CNRS 5146, 158 Cours Fauriel, 42023, St Etienne, France

    C. Maurice

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  1. A. Lecestre
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  2. E. Dubois
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  3. A. Villaret
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  4. T. Skotnicki
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  5. P. Coronel
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  6. G. Patriarche
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  7. C. Maurice
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Correspondence to E. Dubois .

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Editors and Affiliations

  1. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Sciences of Ukraine, Prospect Nauki 41, Kyiv, 03028, Ukraine

    Alexei Nazarov

  2. Tyndall National Institute, """Lee Maltings""", University College, Prospect Row, Cork, Ireland

    J.-P. Colinge

  3. IMEP-LAHC, Sinano Institute, rue Parvis Louis Néel 3, Grenoble Cedex 1, 38016, France

    Francis Balestra

  4. Microwave Laboratory, Université Catholique de Louvain, Place du Levant 3 á, Louvain-la-Neuve, 1348, Belgium

    Jean-Pierre Raskin

  5. Nanoelectronics Research Group, Departmento de Electrónica, Universidad de Granada, Granada, 18071, Spain

    Francisco Gamiz

  6. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Science of Ukraine, pr. Nauki 41, Kyiv, 03080, Ukraine

    V.S. Lysenko

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Lecestre, A. et al. (2011). Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers. In: Nazarov, A., Colinge, JP., Balestra, F., Raskin, JP., Gamiz, F., Lysenko, V. (eds) Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-15868-1_4

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