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Engineering Pseudosubstrates with Porous Silicon Technology

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Book cover Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Part of the book series: Engineering Materials ((ENG.MAT.))

Abstract

In this work, we use a controlled oxidation of a mesoporous silicon substrate as a tool for extending and adjusting the Si lattice parameter to other materials such as SixGe1-x. Our approach involves four steps. First, a seed film is epitaxially grown on a single-crystal Si(100) wafer by Molecular Beam Epitaxy(MBE). Second, porosification is performed according to a standard electrochemical etching procedure but using a “two wafers technique”. Third, the porous part of the sample is oxidized at mild temperatures (300–500°C) in a dry O2 atmosphere, inducing a substantial in-plane expansion of the seed film. Fourth, an overgrowth by MBE of an epilayer is done to test the thus-obtained pseudosubstrate. The challenging task in this last step is to deoxidize the seed film surface at ~900°C without losing the strain induced by oxidation of the porous part of the sample.

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Acknowledgments

We would like to acknowledge the French Research Agency (ANR) for funding this work via a “Projet Blanc” N° BLAN06-1_144612.

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Authors and Affiliations

  1. Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, Université de Lyon, Lyon, France

    N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, J. Penuelas, V. Lysenko, J.-M. Bluet, O. Marty, G. Guillot & G. Grenet

  2. Laboratoire de Tribologie et Dynamique des Systèmes (LTDS), CNRS UMR-5513, Université de Lyon, Lyon, France

    H. Magoariec

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  1. N. P. Blanchard
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  2. A. Boucherif
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  3. Ph. Regreny
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  5. H. Magoariec
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  9. O. Marty
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  10. G. Guillot
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  11. G. Grenet
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Correspondence to G. Grenet .

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Editors and Affiliations

  1. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Sciences of Ukraine, Prospect Nauki 41, Kyiv, 03028, Ukraine

    Alexei Nazarov

  2. Tyndall National Institute, """Lee Maltings""", University College, Prospect Row, Cork, Ireland

    J.-P. Colinge

  3. IMEP-LAHC, Sinano Institute, rue Parvis Louis Néel 3, Grenoble Cedex 1, 38016, France

    Francis Balestra

  4. Microwave Laboratory, Université Catholique de Louvain, Place du Levant 3 á, Louvain-la-Neuve, 1348, Belgium

    Jean-Pierre Raskin

  5. Nanoelectronics Research Group, Departmento de Electrónica, Universidad de Granada, Granada, 18071, Spain

    Francisco Gamiz

  6. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Science of Ukraine, pr. Nauki 41, Kyiv, 03080, Ukraine

    V.S. Lysenko

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Blanchard, N.P. et al. (2011). Engineering Pseudosubstrates with Porous Silicon Technology. In: Nazarov, A., Colinge, JP., Balestra, F., Raskin, JP., Gamiz, F., Lysenko, V. (eds) Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-15868-1_3

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