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Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs

  • T. RudenkoEmail author
  • V. Kilchytska
  • J.-P. Raskin
  • A. Nazarov
  • D. Flandre
Chapter
Part of the Engineering Materials book series (ENG.MAT.)

Abstract

Ultra-thin body silicon-on-insulator (SOI) MOSFET is considered to be a strong candidate for ultimate scaling of CMOS technologies, because of its excellent suppression of the short-channel effects, even without the use of channel doping. Apart from undoped ultra-thin silicon body, nowadays SOI MOSFETs also feature ultra-thin gate high-k gate dielectrics and thin buried oxides. These innovating features bring about special electrical properties. In this work, we describe some of these properties revealed via the back-gate effects, including special behaviors of interface coupling, transport properties and gate tunneling currents, which may be beneficial for the back-gate control schemes.

Notes

Acknowledgments

This work has been partly funded by the European Commission under the frame of the Network of Excellence “NANOSIL” (Silicon-based Nanostructures and Nanodevices, No. 216171) and “EuroSOI+”. The devices have been fabricated within the frame of SOITEC/LETI Nanosmart research program and authors thank CEA-LETI and SOITEC for their support.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • T. Rudenko
    • 1
    Email author
  • V. Kilchytska
    • 2
  • J.-P. Raskin
    • 2
  • A. Nazarov
    • 1
  • D. Flandre
    • 2
  1. 1.Institute of Semiconductor Physics, NAS of UkraineKievUkraine
  2. 2.Université catholique de LouvainLouvain-la-NeuveBelgium

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