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Mobility Characterization in Advanced FD-SOI CMOS Devices

  • G. GhibaudoEmail author
Chapter
Part of the Engineering Materials book series (ENG.MAT.)

Abstract

A review of the main mobility results obtained in short channel devices (here GAA/DG, FD-SOI MOSFETs and FinFETs) are discussed for better understanding their transport limitations and performances. Regarding short channel GAA, FD-SOI and FinFET MOS devices, it has been shown that the mobility is strongly degraded at small gate length, whatever the architecture, the gate stack and the measurement method used. In particular, it has been found that, for FD-SOI, the mobility is more degraded at the top interface than at the bottom interface, revealing that defects are more numerous at the top channel region.

Keywords

Gate Length Short Channel Effective Mobility Short Channel Effect Channel Mobility 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work has been partially supported by European PULLNANO/FP6 integrated project and NANOSIL network of excellence.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  1. 1.IMEP-LAHC, MINATEC/INPGGrenobleFrance

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