Investigation of Tri-Gate FinFETs by Noise Methods
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New noise methods for investigation of SOI MOSFETs are developed. The methods are based on the analysis of the BGI (Back-Gate-Induced) and LKE (Linear Kink Effect) Lorentzian fluctuations of the drain current. The results of application of those methods as well as the methods based on measuring the 1/f noise for studying strained and non-strained fully depleted tri-gate FinFETs with HfSiON/SiO2 or HfO2/SiO2 gate dielectrics are presented. The following effects were observed for the first time: the electron valence-band tunneling currents I EVB flowing through the gate dielectric and the dependences of I EVB on SOI or sSOI substrates are different for HfSiON/SiO2- and HfO2/SiO2-devices; the value of [m′β 2/C eq ] where β is the body factor, C eq is the body-source capacitance and m′ ≈ 1 increases with increasing |V *| under strong inversion conditions for the HfSiON/SiO2-FinFETs; the value of (C eq /β 2) is independent of the fin width W eff at W eff ≤ 0.37 μm; the value of β for FinFETs investigated is higher than for their planar counterparts; the bulk oxide trap density N ot decreases with the distance x from the Si/SiO2 interface, and the distributions N ot (x) are different for different gate dielectrics; in very narrow (W eff = 0.02 μm) SOI devices with a HfO2/SiO2 dielectric the values of N ot are relatively low and homogeneously distributed over x.
KeywordsNoise Spectrum Gate Dielectric Electron Conduction Band Noise Method Selective Epitaxial Growth
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