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Investigation of Tri-Gate FinFETs by Noise Methods

  • N. LukyanchikovaEmail author
  • N. Garbar
  • V. Kudina
  • A. Smolanka
  • E. Simoen
  • C. Claeys
Chapter
  • 1.7k Downloads
Part of the Engineering Materials book series (ENG.MAT.)

Abstract

New noise methods for investigation of SOI MOSFETs are developed. The methods are based on the analysis of the BGI (Back-Gate-Induced) and LKE (Linear Kink Effect) Lorentzian fluctuations of the drain current. The results of application of those methods as well as the methods based on measuring the 1/f noise for studying strained and non-strained fully depleted tri-gate FinFETs with HfSiON/SiO2 or HfO2/SiO2 gate dielectrics are presented. The following effects were observed for the first time: the electron valence-band tunneling currents I EVB flowing through the gate dielectric and the dependences of I EVB on SOI or sSOI substrates are different for HfSiON/SiO2- and HfO2/SiO2-devices; the value of [mβ 2/C eq ] where β is the body factor, C eq is the body-source capacitance and m′ ≈ 1 increases with increasing |V *| under strong inversion conditions for the HfSiON/SiO2-FinFETs; the value of (C eq /β 2) is independent of the fin width W eff at W eff  ≤ 0.37 μm; the value of β for FinFETs investigated is higher than for their planar counterparts; the bulk oxide trap density N ot decreases with the distance x from the Si/SiO2 interface, and the distributions N ot (x) are different for different gate dielectrics; in very narrow (W eff  = 0.02 μm) SOI devices with a HfO2/SiO2 dielectric the values of N ot are relatively low and homogeneously distributed over x.

Keywords

Noise Spectrum Gate Dielectric Electron Conduction Band Noise Method Selective Epitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • N. Lukyanchikova
    • 1
    Email author
  • N. Garbar
    • 1
  • V. Kudina
    • 1
  • A. Smolanka
    • 1
  • E. Simoen
    • 2
  • C. Claeys
    • 2
    • 3
  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsKievUkraine
  2. 2.ImecLeuvenBelgium
  3. 3.KU LeuvenLeuvenBelgium

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