Investigation of Tri-Gate FinFETs by Noise Methods

  • N. LukyanchikovaEmail author
  • N. Garbar
  • V. Kudina
  • A. Smolanka
  • E. Simoen
  • C. Claeys
Part of the Engineering Materials book series (ENG.MAT.)


New noise methods for investigation of SOI MOSFETs are developed. The methods are based on the analysis of the BGI (Back-Gate-Induced) and LKE (Linear Kink Effect) Lorentzian fluctuations of the drain current. The results of application of those methods as well as the methods based on measuring the 1/f noise for studying strained and non-strained fully depleted tri-gate FinFETs with HfSiON/SiO2 or HfO2/SiO2 gate dielectrics are presented. The following effects were observed for the first time: the electron valence-band tunneling currents I EVB flowing through the gate dielectric and the dependences of I EVB on SOI or sSOI substrates are different for HfSiON/SiO2- and HfO2/SiO2-devices; the value of [mβ 2/C eq ] where β is the body factor, C eq is the body-source capacitance and m′ ≈ 1 increases with increasing |V *| under strong inversion conditions for the HfSiON/SiO2-FinFETs; the value of (C eq /β 2) is independent of the fin width W eff at W eff  ≤ 0.37 μm; the value of β for FinFETs investigated is higher than for their planar counterparts; the bulk oxide trap density N ot decreases with the distance x from the Si/SiO2 interface, and the distributions N ot (x) are different for different gate dielectrics; in very narrow (W eff  = 0.02 μm) SOI devices with a HfO2/SiO2 dielectric the values of N ot are relatively low and homogeneously distributed over x.


Noise Spectrum Gate Dielectric Electron Conduction Band Noise Method Selective Epitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    Van Der Ziel, A.: Fluctuation Phenomena in Semiconductors. Butterworths Scientific Publications, London (1959)Google Scholar
  2. 2.
    Lukyanchikova, N.: Noise Research in Semiconductor Physics. Gordon and Breach Science Publishers, London (1996)Google Scholar
  3. 3.
    Jayaraman, R., Sodini, C.G.: A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon. IEEE Trans. Electron Devices 36, 1773–1782 (1989)CrossRefGoogle Scholar
  4. 4.
    Lukyanchikova, N., Garbar, N., Kudina, V., et al.: On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric. Appl. Phys. Lett. 95, 032101–032103 (2009)CrossRefGoogle Scholar
  5. 5.
    Lukyanchikova, N., Petrichuk, M., Garbar, N., et al.: Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistor. J. Appl. Phys. 94, 4461–4469 (2003)CrossRefGoogle Scholar
  6. 6.
    Lukyanchikova, N., Garbar, N., Smolanka, A., et al.: Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate. J. Appl. Phys. 98, 114506–114511 (2005)CrossRefGoogle Scholar
  7. 7.
    Mercha, A., Rafí, J.M., Simoen, E., et al.: “Linear Kink Effect” induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans. Electron Devices 50, 1675–1682 (2003)CrossRefGoogle Scholar
  8. 8.
    Sze, S.M.: Physics of Semiconductor Devices. A Wiley-Interscience Publication. John Wiley & Sons, New York (1981)Google Scholar
  9. 9.
    Lukyanchikova, N., Garbar, N., Kudina, V., et al.: High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs. Solid State Electron 52, 801–807 (2008)CrossRefGoogle Scholar
  10. 10.
    Ghibaudo, G.: New method for the extraction of MOSFET parameters. Electron Lett. 24, 543–545 (1988)CrossRefGoogle Scholar
  11. 11.
    Parton, E., Verheyen, P.: Strained silicon—the key to sub-45 nm CMOS. III-Vs Rev. Adv. Semicond. Mag. 19, 28–31 (2006)Google Scholar
  12. 12.
    Ning, X.J., Gao, D., Bonfanti, P., et al.: Selective epitaxial growth of SiGe for strained Si transistors. Mater. Sci. Eng. B 134, 165–171 (2006)CrossRefGoogle Scholar
  13. 13.
    Frei, J., Johns, Ch., Vazquez, A., et al.: Body effect in tri- and pi-gate SOI MOSFETs. IEEE Electron Device Lett. 25, 813–815 (2004)CrossRefGoogle Scholar
  14. 14.
    Lee, W.-C., Hu, C.: Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling. IEEE Trans. Electron Devices 48, 1366–1373 (2001)CrossRefGoogle Scholar
  15. 15.
    Pantisano, L., Afanas’ev, V., Pourtois, G., et al.: Valence-band electron-tunneling measurement of the gate work function: application to the high-k/polycrystalline silicon interface. J. Appl. Phys. 98, 053712–053718 (2005)CrossRefGoogle Scholar
  16. 16.
    Zhao, W., Seabaugh, A., Adams, V., et al.: Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain. IEEE Electron Device Lett. 26, 410–412 (2005)CrossRefGoogle Scholar
  17. 17.
    King, Y.-C., Fujioka, H., Kamohara, S., et al.: DC electrical oxide thickness model for quantization of the inversion layer in MOSFETs. Semicond. Sci. Technol. 13, 963–966 (1998)CrossRefGoogle Scholar
  18. 18.
    Nguyen, T., Savio, A., Militaru, L., et al.: Spatial distribution of electrically active defects in dual-layer (SiO2/HfO2) gate dielectric n-type metal oxide semiconductor field effect transistors. J. Vac. Sci. Technol. B 27, 329–332 (2009)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • N. Lukyanchikova
    • 1
    Email author
  • N. Garbar
    • 1
  • V. Kudina
    • 1
  • A. Smolanka
    • 1
  • E. Simoen
    • 2
  • C. Claeys
    • 2
    • 3
  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsKievUkraine
  2. 2.ImecLeuvenBelgium
  3. 3.KU LeuvenLeuvenBelgium

Personalised recommendations