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Junctionless Transistors: Physics and Properties

  • J. P. ColingeEmail author
  • C. W. Lee
  • N. Dehdashti Akhavan
  • R. Yan
  • I. Ferain
  • P. Razavi
  • A. Kranti
  • R. Yu
Chapter
Part of the Engineering Materials book series (ENG.MAT.)

Abstract

Junctionless transistors are variable resistors controlled by a gate electrode. The silicon channel is a heavily doped nanowire that can be fully depleted to turn the device off. The electrical characteristics are identical to those of normal MOSFETs, but the physics is quite different. This paper compares the conduction mechanisms in three types of MOS devices: inversion-mode, accumulation-mode and junctionless MOSFET.

Keywords

Doping Concentration Threshold Voltage Gate Voltage Channel Region Gate Length 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • J. P. Colinge
    • 1
    Email author
  • C. W. Lee
    • 1
  • N. Dehdashti Akhavan
    • 1
  • R. Yan
    • 1
  • I. Ferain
    • 1
  • P. Razavi
    • 1
  • A. Kranti
    • 1
  • R. Yu
    • 1
  1. 1.Tyndall National Institute, University College CorkCorkRepublic of Ireland

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