Abstract
There are at least three different fields that have contributed to the development of RE-implanted MOS devices, namely the RE elements and their unique optical properties (see also Sect. 5.1), the development of the MOS technology and the field of Si-based light emission.
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© 2010 Springer-Verlag Berlin Heidelberg
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Rebohle, L., Skorupa, W. (2010). Silicon-Based Light Emission. In: Rare-Earth Implanted MOS Devices for Silicon Photonics. Springer Series in Materials Science, vol 142. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-14447-9_1
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DOI: https://doi.org/10.1007/978-3-642-14447-9_1
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