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The Physics of Semiconductors pp 713–766Cite as

Transistors

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Abstract

Transistors1 are the key elements for electronic circuits such as amplifiers, memories and microprocessors. Transistors can be realized in bipolar technology (Sect. 23.2) or as unipolar devices using the field effect (Sect. 23.3). The equivalent in vacuum-tube technology to the transistor is the triode (Fig. 23.1a). Transistors can be optimized for their properties in analog circuits such as linearity and frequency response or their properties in digital circuits such as switching speed and power consumption.

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References

  1. J.E. Lilienfeld, Device for controlling electric current, US patent 1,900,018, filed 1928, awarded 1933

    Google Scholar 

  2. W. Shockley, A unipolar “field-effect” transistor. Proc. IRE 40, 1365–76 (1952)

    Article  Google Scholar 

  3. G.C. Dacey, I.M. Ross, Unipolar “field-effect” transistor. Proc. IRE 41, 970 (1953)

    Article  Google Scholar 

  4. D. Kahng, M.M. Atalla, Silicon-silicon dioxide field induced surface device, IRE Solid-State Device Research Conference, Carnegie Institute of Technology, Pittsburgh, PA, 1960

    Google Scholar 

  5. C.A. Mead, Proc. IEEE 54, 307 (1966)

    Article  Google Scholar 

  6. W.W. Hooper, W.I. Lehrer, Proc. IEEE 55, 1237 (1967)

    Article  Google Scholar 

  7. S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (John Wiley & Sons, New York, 1981)

    Google Scholar 

  8. H.-D. Liu, Y.-P. Zhao, G. Ramanath, S.P. Murarka, G.-C. Wang, Thin Solid Films 384, 151 (2001)

    Article  ADS  Google Scholar 

  9. C.S. Smith, Phys. Rev. B 94, 42 (1954)

    Article  ADS  Google Scholar 

  10. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature 432, 488 (2004)

    Article  ADS  Google Scholar 

  11. A.M. Cowley, S.M. Sze, J. Appl. Phys. 36, 3212 (1965)

    Article  ADS  Google Scholar 

  12. P.G.A Jespers, Measurements for Bipolar Devives in Process and Device Modelling for Integrated Circuit Design, ed. by F. van de Wiele, W.L. Engl,P.G. Jespers (Noordhoff, Leyden, 1977)

    Google Scholar 

  13. M.J. Morant, Introduction to Semiconductor Devices (Addison-Wesley,Reading, MA, 1964)

    Google Scholar 

  14. H.K. Gummel, H.C. Poon, Bell Syst. Tech. J. 49, 827 (1970)

    Google Scholar 

  15. D.C. Herbert, Semicond. Sci. Technol. 10, 682 (1995)

    Article  ADS  Google Scholar 

  16. D. Cui, D. Sawdai, D. Pavlidis, S.H. Hsu, P. Chin, T. Block, Proc. of the 12th Int. Conf. on Indium Phosphide and Related Materials, 2000, p. 473

    Google Scholar 

  17. Solid State Electronics Laboratory, University of Michigan, www.eecs. umich.edu

  18. M. Feng, N. Holonyak Jr., R. Chan, Appl. Phys. Lett. 84, 1952 (2004)

    Article  ADS  Google Scholar 

  19. R.R. Bockemuehl, IEEE Trans. Electron Devices ED-10, 31 (1963)

    Article  Google Scholar 

  20. R.D. Middlebrook, I. Richer, Solid State Electron. 6, 542 (1963)

    Article  ADS  Google Scholar 

  21. K. Lehovec, R. Zuleeg, Solid State Electron. 13, 1415 (1970)

    Article  ADS  Google Scholar 

  22. H.C. Pao, C.T. Sah, Solid State Electron. 9, 927 (1966)

    Article  ADS  Google Scholar 

  23. K. Yamaguchi, IEEE Trans. Electron Devices ED-26, 1068 (1979)

    Article  ADS  Google Scholar 

  24. R.R. Troutman, IEEE J. Solid-State Circ. SC-9, 55 (1974)

    Article  Google Scholar 

  25. W. Maly, Atlas of IC technologies – An Introduction to VLSI Processes (Benjamin/Cummings Publishing Company, San Francisco, 1987)

    Google Scholar 

  26. D. Udeshi, E. Maldonado, Y. Xu, M. Tao, W.P. Kirk, J. Appl. Phys. 95, 4219 (2004)

    Article  ADS  Google Scholar 

  27. G.E. Moore, Cramming more components onto integrated circuits. Electronics 38(8) April 19th (1965)

    MATH  Google Scholar 

  28. M. Fayolle, F. Romagna, Microelectron. Eng. 37/38, 135 (1997)

    Article  Google Scholar 

  29. C.-H. Tung, G.T.T. Sheng, C.-Y. Lu, ULSI Semiconductor Technology Atlas (John Wiley & Sons, Hoboken, 2003)

    Google Scholar 

  30. K. Hinode, Y. Hanaoka, K.-I. Takeda, S. Kondo, Jpn. J. Appl. Phys. 40, L1097 (2001)

    Article  ADS  Google Scholar 

  31. T. Harada, A. Ueki, K. Tomita, K. Hashimoto, J. Shibata, H. Okamura, K. Yoshikawa, T. Iseki, M. Higashi, S. Maejima, K. Nomura, K. Goto, T. Shono, S. Muranaka, N. Torazawa, S. Hirao, M. Matsumoto, T. Sasaki, S.Matsumoto, S. Ogawa, M. Fujisawa, A. Ishii, M. Matsuura, T. Ueda, International Interconnect Technology Conference (IITC), IEEE 2007, pp. 141–43

    Google Scholar 

  32. P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon,E. Lee, S.-H. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R.Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, IEDM Technical Digest, p. 657 (2004)

    Google Scholar 

  33. www.chipworks.com

  34. Y. Taur, IBM J. Res. & Dev. 46, 213 (2002)

    Article  Google Scholar 

  35. E.J. Nowak, IBM J. Res. & Dev. 46, 169 (2002)

    Article  Google Scholar 

  36. S.-H. Lo, D.A. Buchanan, Y. Taur, W. Wang, IEEE Electron Device Lett. 18, 209 (1997)

    Article  ADS  Google Scholar 

  37. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 87, 484 (2000)

    Article  ADS  Google Scholar 

  38. Ch. Auth, M. Buehler, A. Cappellani, C.-H. Choi, G. Ding, W. Han, S. Joshi, B. McIntyre, M. Prince, P. Ranade, J. Sandford, Ch. Thomas, Intel Techn. J. 12, 77 (2008)

    Google Scholar 

  39. M.A. Quevedo-Lopez, S.A. Krishnan, D. Kirsch, C.H.J. Li, J.H. Sim, C. Huffman, J.J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu, T.P. Ma, IEDM Technical Digest, p. 425 (2005)

    Google Scholar 

  40. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier,M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T.Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R.Heussner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K.Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C.Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds,J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P.Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki,IEDM Technical Digest, p. 247 (2007)

    Google Scholar 

  41. K. Mistry, M. Armstrong, C. Auth, S. Cea, T. Coan, T. Ghani, T. Hoffmann,A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, K. Zhang, S. Thompson,M. Bohr, Symp. VLSI Technology Digest of Technical Papers, pp. 50–51 (2004)

    Google Scholar 

  42. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A.-T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K.C. Saraswat, Microelectr.Eng. 84, 2063 (2007)

    Article  Google Scholar 

  43. T. Guillaume, M. Mouis, Solid State Electron. 50, 701 (2006)

    Article  ADS  Google Scholar 

  44. E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr, J. Comput.Electron. 6, 55 (2007)

    Article  Google Scholar 

  45. M. Bohr, The Invention of Uniaxial Strained Silicon Transistors at Intel,Intel 2007)

    Google Scholar 

  46. Synopsys, Inc., www.synopsys.com

  47. W. Hansch, C. Fink, J. Schulze, I. Eisele, Thin Solid Films 369, 287 (2000)

    Article  Google Scholar 

  48. P.-F. Wang, K. Hilsenbeck, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, W. Hansch, Solid State Electron. 48, 2281 (2004)

    Article  ADS  Google Scholar 

  49. W.M. Reddick, G.A.J. Amaratunga, Appl. Phys. Lett. 67, 494 (1995)

    Article  ADS  Google Scholar 

  50. P.-F.Wang, T. Nirschl, D. Schmitt-Landsiedel, W. Hansch, Solid State Electron.47, 1187 (2003)

    Article  ADS  Google Scholar 

  51. E.-H. Toh, G.H. Wang, G. Samudra, Y.-C. Yeo, J. Appl. Phys. 103, 104504 (2008)

    Article  ADS  Google Scholar 

  52. G.R. Fox, R.Bailey, W.B. Kraus, F. Chu, S. Sun, T. Davenport, The Current Status of FeRAM in Ferroelectric Random Access Memories, Topics in Applied Physics 93, ed. by H. Ishiwara, M. Okuyama, Y. Arimoto, (Springer,Berlin, 2004), pp. 139–49

    Google Scholar 

  53. Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwisch, A. Schrott, J.B. Philipp, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F.Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, C. Lam, IEDM Technical Digest (2006), p. 777

    Google Scholar 

  54. Zh. Sun, J. Zhou, R. Ahuja, Phys. Rev. Lett. 98, 055505 (2007)

    Article  ADS  Google Scholar 

  55. J. Heged¨us, S.R. Elliott, Nature Mater. 7, 399 (2008)

    Article  ADS  Google Scholar 

  56. P.K. Naji, ISSCC Digest of Technical Papers (2001), p. 122

    Google Scholar 

  57. W.J. Gallagher, S.S.P. Parkin, IBM J. Res. & Dev. 50, 5 (2006)

    Article  Google Scholar 

  58. M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, M. Mitkova, IEEE Non-Volatile Memory Technology Symposium (2004), pp. 10–17

    Google Scholar 

  59. M.N. Kozicki, P. Mira, M. Mitkova, IEEE Trans. Nanotechnol. 4, 331–338 (2005)

    Article  ADS  Google Scholar 

  60. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nature Mater. 5, 312 (2006)

    Article  ADS  Google Scholar 

  61. A. Beck, J.G. Bednorz, Ch. Gerber, C. Rossel, D.Widmer, Appl. Phys. Lett.77, 139 (2000)

    Article  ADS  Google Scholar 

  62. S. Karg, G. I. Meijer, D. Widmer, R. Stutz, J. G. Bednorz, Ch. Rettner, IEEE NVSMW Monterey, California (2007), pp. 68

    Google Scholar 

  63. M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, B.P. Andreasson, Adv. Mater. 19, 2232 (2007)

    Article  Google Scholar 

  64. M. A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, J.M. Tour, Science 278, 252 (1997)

    Article  Google Scholar 

  65. A. Aviram, M. Ratner (eds.), Molecular electronics: science and technology. Ann. N. Y. Acad. Sci. 852 (1998)

    Google Scholar 

  66. E.F. Schubert, Delta-doping of semiconductors: electronic, optical and structural properties of materials and devices. Semicond. Semimet. 40, 1–151 (1994)

    Article  Google Scholar 

  67. M. Schlechtweg, A. Tessmann, A. Leuther, C. Schw¨orer, M. Lang, U. Nowotny, O. Kappeler, Proc. of the European Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS 2003) (Horizon House, London, 2003), pp. 465–68

    Google Scholar 

  68. Y. Kuo (ed.), Thin Film Transistors: Materials and Processes (Springer,Netherlands, 2003)

    Google Scholar 

  69. G. Horowitz, Adv. Mater. 10, 365–77 (1998)

    Article  Google Scholar 

  70. Y.M. Sun, Y.Q. Liu, D.B. Zhu, J. Mater. Chem. 15, 53–65 (2005)

    Article  Google Scholar 

  71. D. Lubyshev, W.K. Liu, T.R. Stewart, A.B. Cornfeld, X.M. Fang, X. Xu, P. Specht, C. Kisielowski, M. Naidenkova, M.S. Goorsky, C.S. Whelan, W.E. Hoke, P.F. Marsh, J.M. Millunchick, S.P. Svensson, J. Vac. Sci. Technol. B 19, 1510 (2001)

    Article  Google Scholar 

  72. C.T. Liu, Revolution of the TFT LCD technology, J. Displ. Technol. 3, 342 (2007)

    Article  ADS  Google Scholar 

  73. U. K¨oster, Phys. Stat. Sol. (A) 48, 313 (1978)

    Article  ADS  Google Scholar 

  74. D. Toet, P.M. Smith, T.W. Sigmon, T. Takehara, C.C. Tsai, W.R. Harshbarger, M.O. Thompson, J. Appl. Phys. 85, 7914 (1999)

    Article  ADS  Google Scholar 

  75. R.B. Iverson, R. Reif, J. Appl. Phys. 62, 1675 (1987)

    Article  ADS  Google Scholar 

  76. N. Yamauchi, R. Reif, J. Appl. Phys. 75, 3235–57 (1994)

    Article  ADS  Google Scholar 

  77. G. Liu, S.J. Fonash, Appl. Phys. Lett. 62, 2554 (1993)

    Article  ADS  Google Scholar 

  78. M.S. Haque, H.A. Naseem, W.D. Brown, J. Appl. Phys. 79, 7529 (1996)

    Article  ADS  Google Scholar 

  79. L.H. Lee, Y.K. Fang, S.H. Fan, Electron. Lett. 35, 1108 (1999)

    Article  Google Scholar 

  80. T.K. Kim, T.H. Ihn, B.I. Lee, S.K. Joo, Jpn. J. Appl. Phys. 37, 4244 (1998)

    Article  ADS  Google Scholar 

  81. S.-W. Lee, Y.-C. Jeon, S.-K. Joo, Appl. Phys. Lett. 66, 1671 (1995)

    Article  ADS  Google Scholar 

  82. K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, K. Hotta, IEEE Trans. Electron Devices 36, 2868 (1989)

    Article  ADS  Google Scholar 

  83. H. Gleskova, S. Wagner, Appl. Phys. Lett. 79, 3347 (2001)

    Article  ADS  Google Scholar 

  84. N. Yamauchi, N. Kakuda, T. Hisaki, IEEE Trans. Electron Devices 41, 1882 (1994)

    Article  ADS  Google Scholar 

  85. M. Zaghdoudi, R. Rogel, N. Alzaied, M. Fathallah, T. Mohammed-Brahim, Mat. Sci Engin. C 28, 1010 (2008)

    Article  Google Scholar 

  86. J.F. Wager, Science 300, 1245 (2003)

    Article  Google Scholar 

  87. H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, Appl. Phys. Lett. 92, 192108 (2008)

    Article  ADS  Google Scholar 

  88. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern, Phys. Stat. Sol. (A) 207, 1437–1449 (2010)

    Article  ADS  Google Scholar 

  89. H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann, J. Appl. Phys. 107, 114515 (2010)

    Article  ADS  Google Scholar 

  90. S.R. Forrest, Chem. Rev. 97, 1793 (1997)

    Article  Google Scholar 

  91. G. Horowitz, J. Mater. Res. 19, 1946 (2004)

    Article  ADS  Google Scholar 

  92. Ch.W¨oll (ed.), Physical and Chemical Aspects of Organic Electronics (Wiley-VCH, Weinheim, 2009)

    Google Scholar 

  93. G. Horowitz, F. Garnier, A. Yassar, R. Hajlaoui, F. Kouki, Adv. Mater. 8, 52 (1996)

    Article  Google Scholar 

  94. H.E. Katz, C. Kloc, V. Sundar, J. Zaumseil, A.L. Briseno, Z. Bao, J. Mater. Res. 19, 1995 (2004)

    Article  ADS  Google Scholar 

  95. S. Jit, P.K. Pandey, P.K. Tiwari, Solid State Electron. 53, 57 (2009)

    Article  ADS  Google Scholar 

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  1. Universität Leipzig, Inst. f. Experimentelle Physik II, AG Halbleiterphysik, Linnéstr. 5, 04103, Leipzig, Germany

    Prof. Dr. Marius Grundmann

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Grundmann, M. (2010). Transistors. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13884-3_23

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