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Space-Charge Layers at Semiconductor Inferfaces

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Abstract

If one puts a positive point charge into a locally neutral electron plasma (electrons on the background of fixed positive cores), the electrons in the neighborhood will rearrange to compensate that additional charge; they will screen it, such that far away from the charge the electric field vanishes. The higher the electron density, the shorter the range over which electrons have to rearrange in order to establish an effective shielding. In metals with free-electron concentrations of about 1022 cm−3 the screening length is short, on the order of atomic distances. On the other hand, in semiconductors the free-carrier concentrations are usually much lower, on the order of 1017 cm−3 may be, and we thus expect much larger screening lengths, of the order of hundreds of Ångstroms. These spatial regions of redistributed screening charges are called space charge regions.

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  1. H. Ibach, H. Lüth: Solid-State Physics, 3rd edn. (Springer, Berlin, Heidelberg 2003)

    Google Scholar 

  2. A. Many, Y. Goldstein, N.B. Grover: Semiconductor Surfaces (North Holland, Amsterdam 1965)

    Google Scholar 

  3. H. Lüth, M. Büchel, R. Dorn, M. Liehr, R. Matz: Phys. Rev. B 15, 865 (1977)

    Article  ADS  Google Scholar 

  4. E. Veuhoff, C.D. Kohl: J. Phys. C: Solid State Phys. 14, 2395 (1981)

    Google Scholar 

  5. T. Ando, A.B. Fowler, F. Stern: Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437 (AIP, New York 1982)

    Article  ADS  Google Scholar 

  6. F.J. Allen, G.W. Gobeli : Phys. Rev. 127, 152 (1962)

    Article  ADS  Google Scholar 

  7. K.C. Pandey: Phys. Rev. Lett. 47, 1913 (1981)

    Article  ADS  Google Scholar 

  8. M. Henzler: Phys. Status Solidi 19, 833 (1967): W. Mönch: Phys. Status Solidi 40, 257 (1970)

    Article  Google Scholar 

  9. J. von Wienskowski, W. Mönch: Phys. Status Solidi B 45, 583 (1971): G.W. Gobeli, F.G. Allen: Surf. Sci. 2, 402 (1964)

    Article  ADS  Google Scholar 

  10. F. Himpsel, D.E. Eastman: J. Vac. Sci. Technol. 16, 1287 (1979): W. Mönch, P. Koke, S. Krüger: J. Vac. Sci. Technol. 19, 313 (1981)

    ADS  Google Scholar 

  11. Private communication by H. Wagner (ISI, Research Center Jülich, 1988)

    Google Scholar 

  12. J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 8071 (1987): F.J. Himpsel, D.E. Eastman, P. Heimann, B. Reihl, C.W. White, D.M. Zehner: Phys. Rev. B 24, 1120 (1981): P. Mårtensson, W. Ni, G. Hansson, J.M. Nicholls, B. Reihl: Phys.Rev. B 36, 5974 (1987)

    Article  ADS  Google Scholar 

  13. P. Balk (ed.): The Si-SiO2 System, in Materials Science Monographs 32 (Elsevier, Amsterdam 1988)

    Google Scholar 

  14. H. Ibach, H.D. Bruchmann, H. Wagner: Appl. Phys. A 29, 113 (1982)

    Article  ADS  Google Scholar 

  15. M.H. White, J.R. Cricchi: Characterization of Thin Oxide MNOS Memory Transistors, IEEE Trans. ED-19, 1280 (1972)

    Article  Google Scholar 

  16. F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, A. Madhukar: J. Vac. Sci. Technol. 16, 1443 (1979)

    Article  ADS  Google Scholar 

  17. F.J. Grunthaner, B.F. Lewis, J. Maserjian : J. Vac. Sci. Techol. 20, 747 (1982)

    Article  ADS  Google Scholar 

  18. S.P. Svensson, J. Kanski, T.G. Andersson, P.-O. Nilsson: J. Vac. Sci. Technol. B 2, 235 (1984)

    Article  Google Scholar 

  19. A. Förster, H. Lüth: Surf. Sci. 189/190, 307 (1987)

    Article  ADS  Google Scholar 

  20. K. Smit, L. Koenders, W. Mönch: J. Vac. Sci. Technol. B 7, 888 (1989)

    Article  Google Scholar 

  21. I. Mahboob, T.D. Veal, C.F. McConville: Phys. Rev. Lett. 92, 036804–1 (2004)

    Article  ADS  Google Scholar 

  22. P.D.C. King, T.D. Veal, P.H. Jefferson, S.A. Hatfield, L.F.J. Piper, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, Hai Lu, W.J. Schaff: Phys. Rev. B 77, 045316 (2008)

    Article  ADS  Google Scholar 

  23. H. Moormann, D. Kohl, G. Heiland: Surf. Sci. 80, 261 (1979)

    Article  ADS  Google Scholar 

  24. G. Heiland, H. Lüth: Adsorption on oxides, in The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol.3, ed. by D.A. King, D.P. Woodruff (Elsevier, Amsterdam 1984) p. 137

    Google Scholar 

  25. G. Heiland, P. Kunstmann: Surf. Sci. 13, 72 (1969)

    Article  ADS  Google Scholar 

  26. D. Kahng, M.M. Atalla: Silicon-Silicon Dioxide Field Induced Surface Devices, IRE Solid State Device Res. Conf., Carnegie Institute of Technology, Pittsburgh, Pa., 1960: D. Kahng: A Historical Perspective on the Development of MOS Transistors and Related Devices, IEEE Trans. ED-23, 655 (1976)

    Google Scholar 

  27. H.C. Pao, C.T. Sah: “Effects of diffusion current on characteristics of metaloxide (insulator) semiconductor transistors (MOST)”, Solid State Electron. 9, 927 (1966)

    Article  ADS  Google Scholar 

  28. S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981) p.431

    Google Scholar 

  29. A. Kamgar, P. Kneschaurek, G. Dorda, J.F. Koch: Phys. Rev. Lett. 32, 1251 (1974)

    Article  ADS  Google Scholar 

  30. A.B. Fowler, F.F. Fang, W.E. Howard, P.J. Stiles: Phys. Rev. Lett. 16, 901 (1966)

    Article  ADS  Google Scholar 

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Lüth, H. (2010). Space-Charge Layers at Semiconductor Inferfaces. In: Solid Surfaces, Interfaces and Thin Films. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13592-7_7

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  • DOI: https://doi.org/10.1007/978-3-642-13592-7_7

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