Summary
A numerical study of domain wall relocation during voltage switching in a semiconductor device whose current-voltage characteristic exhibits the alternation of intervals of stationary states with intervals of oscillatory states is presented. Voltage switching between voltage intervals always induces the emission of a relocation wave, but relocation can be permanent or not depending on the voltage increase.
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Escobedo, R., Carretero, M., Bonilla, L.L., Platero, G. (2010). Relocation Dynamics During Voltage Switching in Spin-Polarized Superlattices. In: Fitt, A., Norbury, J., Ockendon, H., Wilson, E. (eds) Progress in Industrial Mathematics at ECMI 2008. Mathematics in Industry(), vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-12110-4_19
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DOI: https://doi.org/10.1007/978-3-642-12110-4_19
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