Abstract
A lot of work was spent to combine bipolar devices with their superior current density with the possibility of voltage control as given in MOSFETs. Early works tried to combine thyristor-related structures with MOS gate control. However, a transistor-based device won the race. The insulated gate bipolar transistor (IGBT) was invented in the United States by Wheatley and Becke [Bec80]. The advantage compared to the bipolar transistor and MOSFET was described by [Bal82]. About 10 years later, IGBT s were introduced in the market by manufacturers from Japan and Europe. In a short time, IGBTs won an increasing share of applications and they replaced the formerly used bipolar power transistors, and nowadays even GTO-thyristors in the high-power range.
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Notes
- 1.
Meanwhile the name COMFET is usual for the composite field effect transistor, a device which is used in analogous circuits.
- 2.
Equation (10.9) is usually derived for low injection. The considerations, however, will also be valid for high injection, qualitatively.
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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2010). IGBTs. In: Semiconductor Power Devices. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-11125-9_10
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